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Register a new userRare-Earth vs. Heavy Metal Pigments and their Colors from First Principles
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Many inorganic pigments contain heavy metals hazardous to health and environment. Much attention has been devoted to the quest for non-toxic alternatives based on rare-earth elements. The computation of colors from first principles is a challenge to electronic structure methods however, especially for materials with localized f-orbitals. Here, starting from atomic positions only, we compute the color of the red pigment cerium fluorosulfide CeSF, as well as of mercury sulfide HgS (classic vermilion). Our methodology employs many-body theories to compute the optical absorption, combined with an intermediate length-scale modelization to assess how coloration depends on film thickness, pigment concentration and granularity. We introduce a quantitative criterion for the performance of a pigment. While for HgS this criterion is satisfied due to large transition matrix elements between wide bands, CeSF presents an alternative paradigm: the bright red color is shown to stem from the combined effect of the quasi two-dimensionality and the localized nature of 4f-states. Our work demonstrates the power of modern computational methods, with implications for the theoretical design of materials with specific optical properties.
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We present results of an ab-initio study of the electronic structure of 140 rare earth compounds. Specifically we predict an electronic phase diagram of the entire range of rare earth monopnictides and monochalcogenides, composed of metallic, semiconducting and heavy fermion-like regions, and exhibiting valency transitions brought about by a complex interplay between ligand chemistry and lanthanide contraction. The calculations exploit the combined effect of a first-principles methodology, which can adequately describe the dual character of electrons, itinerant vs. localized, and high throughput computing made possible by the increasing available computational power. Our findings, including the predicted intermediate valent compounds SmO and TmSe, are in overall excellent agreement with the available experimental data. The accuracy of the approach, proven e.g. through the lattice parameters calculated to within 1.5% of the experimental values, and its ability to describe localization phenomena in solids, makes it a competitive atomistic simulation approach in the search for and design of new materials with specific physical properties and possible technological applications.
The self-interaction-corrected local-spin-density approximation is used to describe the electronic structure of dioxides, REO$_2$, and sesquioxides, RE$_2$O$_3$, for the rare earths, RE=Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy and Ho. The valencies of the rare earth ions are determined from total energy minimization. We find Ce, Pr, Tb in their dioxides to have the tetravalent configuration, while for all the sesquioxides the trivalent groundstate configuration is found to be the most favourable. The calculated lattice constants for these valency configurations are in good agreement with experiment. Total energy considerations are exploited to show the link between oxidation and $f$-electron delocalization, and explain why, among the dioxides, only the CeO$_2$, PrO$_2$, and TbO$_2$ exist in nature. Tetravalent NdO$_2$ is predicted to exist as a metastable phase - unstable towards the formation of hexagonal Nd$_2$O$_3$.
For most metals, increasing temperature (T) or disorder will quicken electron scattering. This hypothesis informs the Drude model of electronic conductivity. However, for so-called bad metals this predicts scattering times so short as to conflict with Heisenbergs uncertainty principle. Here we introduce the rare-earth nickelates (RNiO_3, R = rare earth) as a class of bad metals. We study SmNiO_3 thin films using infrared spectroscopy while varying T and disorder. We show that the interaction between lattice distortions and Ni-O bond covalence explains both the bad metal conduction and the insulator-metal transition in the nickelates by shifting spectral weight over the large energy scale established by the Ni-O orbital interaction, thus enabling very low sigma while preserving the Drude model and without violating the uncertainty principle.
First principles approaches have been successful in solving many-body Hamiltonians for real materials to an extent when correlations are weak or moderate. As the electronic correlations become stronger often embedding methods based on first principles approaches are used to better treat the correlations by solving a suitably chosen many-body Hamiltonian with a higher level theory. Such combined methods are often referred to as second principles approaches. At such level of the theory the self energy, i.e. the functional that embodies the stronger electronic correlations, is either a function of energy or momentum or both. The success of such theories is commonly measured by the quality of the self energy functional. However, self-consistency in the self-energy should, in principle, also change the real space charge distribution in a correlated material and be able to modify the electronic eigenfunctions, which is often undermined in second principles approaches. Here we study the impact of charge self-consistency within two example cases: TiSe$_{2}$, a three-dimensional charge-density-wave candidate material, and CrBr$_{3}$, a two-dimensional ferromagnet, and show how real space charge re-distribution due to correlation effects taken into account within a first principles Greens function based many-body perturbative approach is key in driving qualitative changes to the final electronic structure of these materials.
Vanadium dioxide(VO$_2$) is a paradigmatic example of a strongly correlated system that undergoes a metal-insulator transition at a structural phase transition. To date, this transition has necessitated significant post-hoc adjustments to theory in order to be described properly. Here we report standard state-of-the-art first principles quantum Monte Carlo (QMC) calculations of the structural dependence of the properties of VO$_2$. Using this technique, we simulate the interactions between electrons explicitly, which allows for the metal-insulator transition to naturally emerge, importantly without ad-hoc adjustments. The QMC calculations show that the structural transition directly causes the metal-insulator transition and a change in the coupling of vanadium spins. This change in the spin coupling results in a prediction of a momentum-independent magnetic excitation in the insulating state. While two-body correlations are important to set the stage for this transition, they do not change significantly when VO$_2$ becomes an insulator. These results show that it is now possible to account for electron correlations in a quantitatively accurate way that is also specific to materials.
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