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Register a new userEnhanced thermoelectric performance in TiNiSn-based half-Heuslers
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Thermoelectric figures of merit, ZT > 0.5, have been obtained in arc-melted TiNiSn-based ingots. This promising conversion efficiency is due to a low lattice thermal conductivity, which is attributed to excess nickel in the half-Heusler structure.
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The thermoelectric properties of n type semiconductor, TiNiSn is optimized by partial substitution with metallic, MnNiSb in the half Heusler structure. Herein, we study the transport properties and intrinsic phase separation in the system. The Ti1-xMnxNiSn1-xSbx alloys were prepared by arc-melting and were annealed at temperatures obtained from differential thermal analysis and differential scanning calorimetry results. The phases were characterized using powder X-ray diffraction patterns, energy dispersive X-ray spectroscopy, and differential scanning calorimetry. After annealing the majority phase was TiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn, and MnSn2. Ni rich sites were caused by Frenkel defects, this led to a metal-like behavior of the semiconducting specimens at low temperature. For x up to 0.05 the samples showed an activated conduction, whereas for x>0.05 they showed metallic character. The figure of merit for x=0.05 was increased by 61% (ZT=0.45) in comparison to the pure TiNiSn.
The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low lattice thermal conductivity, the thermoelectric figure of merit (ZT) of LaPtSb can be optimized to a record high value of 2.2 by fine tuning the carrier concentration.
Tin chalcogenides (SnS, SnSe, and SnTe) are found to have improved thermoelectric properties upon the reduction of their dimensionality. Here we found the tilted AA + s stacked two-dimensional (2D) SnTe bilayer as the most stable phase among several stackings as predicted by the structural optimization and phonon transport properties. The carrier mobility and relaxation time are evaluated using the deformation potential theory, which is found to be relatively high due to the high 2D elastic modulus, low deformation potential constant, and moderate effective masses. The SnTe bilayer shows a high Seebeck coefficient, high electrical conductivity, and ultralow lattice thermal conductivity. High TE figure of merit (ZT) values, as high as 4.61 along the zigzag direction, are predicted for the SnTe bilayer. These ZT values are much enhanced as compared to the bulk as well as monolayer SnTe and other 2D compounds.
A half-Heusler material FeNb$_{0.8}$Ti$_{0.2}$Sb has been identified as a promising thermoelectric material due to its excellent thermoelectric performance at high temperatures. The origins of the efficient thermoelectric performance are investigated through a series of low-temperature (2 - 400 K) measurements. The high data coherence of the low and high temperatures is observed. An optimal and nearly temperature-independent carrier concentration is identified, which is ideal for the power factor. The obtained single type of hole carrier is also beneficial to the large Seebeck coefficient. The electronic thermal conductivity is found to be comparable to the lattice thermal conductivity and becomes the dominant component above 200 K. These findings again indicate that electron scattering plays a key role in the electrical and thermal transport properties. The dimensionless figure of merit is thus mainly governed by the electronic properties. These effects obtained at low temperatures with the avoidance of possible thermal fluctuations together offer the physical origin for the excellent thermoelectric performance in this material.
High-performance thermoelectric oxides could offer a great energy solution for integrated and embedded applications in sensing and electronics industries. Oxides, however, often suffer from low Seebeck coefficient when compared with other classes of thermoelectric materials. In search of high-performance thermoelectric oxides, we present a comprehensive density functional investigation, based on GGA$+U$ formalism, surveying the 3d and 4d transition-metal-containing ferrites of the spinel structure. Consequently, we predict MnFe$_2$O$_4$ and RhFe$_2$O$_4$ have Seebeck coefficients of $sim pm 600$ $mu$V K$^{-1}$ at near room temperature, achieved by light hole and electron doping. Furthermore, CrFe$_2$O$_4$ and MoFe$_2$O$_4$ have even higher ambient Seebeck coefficients at $sim pm 700$ $mu$V K$^{-1}$. In the latter compounds, the Seebeck coefficient is approximately a flat function of temperature up to $sim 700$ K, offering a tremendous operational convenience. Additionally, MoFe$_2$O$_4$ doped with $10^{19}$ holes/cm$^3$ has a calculated thermoelectric power factor of $689.81$ $mu$W K$^{-2}$ m$^{-1}$ at $300$ K, and $455.67$ $mu$W K$^{-2}$ m$^{-1}$ at $600$ K. The thermoelectric properties predicted here can bring these thermoelectric oxides to applications at lower temperatures traditionally fulfilled by more toxic and otherwise burdensome materials.
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