Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userLow density flux pinning in YBCO single crystals
126
0
0.0
(
0
)
Added by
Valeriy Timofeev P.
Publication date
2012
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
The Abricosov vortex and bundles dynamics was experimentally investigated in Earths magnetic field range. Isothermal relaxation features in YBCO single crystal samples with strong pinning centers were studied for different sample-field orientation. The normalized relaxation rate S obtained allowed to estimate the effective pinning potential U in the bulk of the YBCO sample and its temperature dependence, as well as the critical current density Jc. A comparison between the data obtained and the results for similar measurements in significantly higher magnetic fields was performed. To compare different Jc measuring techniques magnetization loop M(H) measurements, were made. These measurements provide many important parameters of the sample under study (penetration field Hp, first critical field Hc1, etc.) that contain the geometrical configuration of the samples.
rate research
Read More
We measured the first and third harmonic of the complex AC susceptibility in YBCO single crystals with different oxygen content. The amplitude of the AC field was varied in presence of an external DC field both applied parallel to the c axis of the crystals. We show evidence that deoxygenation leads to a reduction of bulk pinning strength and consequently to a stronger contribution of geometrical barriers.
Local magnetic measurements are used to quantitatively characterize heterogeneity and flux line pinning in PrFeAsO_1-y and NdFeAs(O,F) superconducting single crystals. In spite of spatial fluctuations of the critical current density on the macroscopic scale, it is shown that the major contribution comes from collective pinning of vortex lines by microscopic defects by the mean-free path fluctuation mechanism. The defect density extracted from experiment corresponds to the dopant atom density, which means that dopant atoms play an important role both in vortex pinning and in quasiparticle scattering. In the studied underdoped PrFeAsO_1-y and NdFeAs(O,F) crystals, there is a background of strong pinning, which we attribute to spatial variations of the dopant atom density on the scale of a few dozen to one hundred nm. These variations do not go beyond 5% - we therefore do not find any evidence for coexistence of the superconducting and the antiferromagnetic phase. The critical current density in sub-T fields is characterized by the presence of a peak effect, the location of which in the (B,T)-plane is consistent with an order-disorder transition of the vortex lattice.
The effect of annealing on the basal-plane electrical resistivity of the YBa$_2$Cu$_3$O$_{7-delta}$ single crystals is studied in a broad range of oxygen contents. Within the framework of s-d scattering of electrons by phonons, an increase in the oxygen deficit index, $delta$, leads to a significant increase in the Debye temperature, $theta$, which is associated with the isotropization of the phonon spectrum as the concentration of oxygen vacancies increases. Near the optimal doping, the role of the paraconductivity becomes crucial, whereas its contribution decreases with increasing $delta$. At large values of $delta$ some deviations from the s-d model of electron scattering by phonons are observed at room temperature, while no paraproductivity is observed. In the superconducting transition region, a 2D-3D crossover is observed, which shifts in the direction of $T_c$ with increasing $delta$. The estimate for the transverse coherence length is about $1$,AA.
Irradiation with electrons is an efficient approach to inducing a large number of defects with a minimal impact on the material itself. Analysis of the energy transfer from an accelerated particle smashing into the crystal lattice shows that only electrons with MeV energies produce point defects in the form of interstitial ions and vacancies that form perfect scattering centers. Here, we investigate the changes in the resistive characteristics of YBCO single crystals from the 1-2-3 system after several steps of low-temperature irradiation with $0.5-2.5$,MeV electrons and irradiation doses of up to $8.8times10^{18}$,cm$^{-2}$. The penetration depth of such electrons is much larger than the crystal thickness. We reveal that defects appearing in consequence of such electron irradiation not only increase the residual resistance, but they affect the phonon spectrum of the system and lower the superconducting transition temperature linearly with increase of the irradiation dose. Furthermore, the irradiation-induced defects are distributed non-uniformly, that manifests itself via a broadening of the superconducting transition. Interestingly, the excess conductivity remains almost unaffected after such electron irradiation.
We report flux free growth of superconducting FeSe single crystals by an easy and versatile high temperature melt and slow cooling method for first time. The room temperature XRD on the surface of the piece of such obtained crystals showed single 101 plane of Beta-FeSe tetragonal phase. The bulk powder XRD, being obtained by crushing the part of crystal chunk showed majority tetragonal and minority FeSe hexagonal crystalline phases. Detailed HRTEM images along with SAED (selected area electron diffraction) showed the abundance of both majority and minority FeSe phases. Both transport (RT) and magnetization (MT) exhibited superconductivity at below around 10K. Interestingly, the magnetization signal of these crystals is dominated by the magnetism of minority magnetic phase, and hence the isothermal magnetization (MH) at 4K was seen to be ferromagnetic (FM) like. Transport (R-T) measurements under magnetic field showed superconductivity onset at below 12K, and R = 0 (Tc) at 9K. Superconducting transition temperature (Tc) decreases with applied field to around 6K at 7Tesla, with dTc/dH of 0.4K/Tesla, giving rise to an Hc2 value of around 50 Tesla, 30 Tesla and 20 Tesla for Rn = 90, 50 and 10 percent respectively. FeSe single crystal activation energy is calculated from Thermally Activated Flux Flow (TAFF) model which is found to decreases with field.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
