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Register a new userNegative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system
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Kilanski Lukasz Dr.
Publication date
2012
fields
Physics
and research's language is
English
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Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we attribute to two mechanisms i.e. weak localization occurring at low fields and spin disorder scattering giving contribution mainly at higher magnetic fields. A pronounced hysteretic anomalous Hall effect (AHE) was observed. The estimated AHE coefficient shows a small temperature dependence and is dependent on Mn-content, with changes in the range of 10E-7 < R_S < 10E-6 m^3/C. The scaling law analysis has proven that the AHE in this system is due to the extrinsic mechanisms, mainly due to the skew scattering accompanied with the side jump processes.
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The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) are observed in a Cr2O3/Ta structure. The structural and surface morphology of Cr2O3/Ta bilayers have been investigated. Temperature dependence of longitudinal and transverse resistances measurements confirm the relationship between SMR and AHE signals in Cr2O3/Ta structure. By means of temperature dependent magnetoresistance measurements, the physical origin of SMR in the Cr2O3/Ta structure is revealed, and the contribution to the SMR from the spin current generated by AHE has been proved. The so-called boundary magnetization due to the bulk antiferromagnetic order in Cr2O3 film may be responsible for the relationship of SMR and AHE in the Cr2O3/Ta bilayer.
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall effect also leads to spin accumulation at the surfaces perpendicular to both the current and magnetization direction. Here we experimentally demonstrate that the spin accumulation, subsequent spin backflow, and spin-charge conversion can give rise to a different type of spin current related magnetoresistance, dubbed here as the anomalous Hall magnetoresistance, which has the same angular dependence as the recently discovered spin Hall magnetoresistance. The anomalous Hall magnetoresistance is observed in four types of samples: co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnx and Pt multilayer, Fe1-xMnx with x = 0.17 to 0.65 and Fe, and analyzed using the drift-diffusion model. Our results provide an alternative route to study charge-spin conversion in ferromagnets and to exploit it for potential spintronic applications.
We report a comprehensive investigation of the structural, magnetic, transport and thermodynamic properties of a single crystal PrAlSi, in comparison to its nonmagnetic analogue LaAlSi. PrAlSi exhibits a ferromagnetic transition at $T_C$ = 17.8 K which, however, is followed by two weak phase transitions at lower temperatures. Based on the combined dc and ac magnetic susceptibility measurements, we propose the two reentrant magnetic phases below $T_C$ to be spin glasses or ferromagnetic cluster glasses. When the magnetic glassy states are suppressed by small field, several remarkable features appear. These include a linear, nonsaturating magnetoresistance as a function of field that is reminiscent of a topological or charge-compensated semimetal, and a large anomalous Hall conductivity amounting to $sim$2000 $Omega ^{-1}$cm$^{-1}$. Specific-heat measurements indicate a non-Kramers doublet ground state and a relatively low crystal electric field splitting of the Pr$^{3+}$ multiplets of less than 100 K. Shubnikov-de Hass oscillations are absent in LaAlSi, whereas they are clearly observed below about 25 K in PrAlSi, with an unusual temperature dependence of the dominating oscillation frequency $F$. It increases from $F$ = 18 T at 25 K to $F$ = 33 T at 2 K, hinting at an emerging Fermi pocket upon cooling into the ordered phase. These results suggest that PrAlSi is a new system where a small Fermi pocket of likely relativistic fermions is strongly coupled to magnetism. Whether hybridization between $f$ and conduction band is also involved remains an intriguing open problem.
We investigate the observation of negative spin Hall magnetoresistance (SMR) in antiferromagnetic Cr2O3/Ta bilayers at low temperature. The sign of the SMR signals is changed from positive to negative monotonously from 300 K to 50 K. The change of the signs for SMR is related with the competitions between the surface ferromagnetism and bulky antiferromagnetic of Cr2O3. The surface magnetizations of Cr2O3 (0001) is considered to be dominated at higher temperature, while the bulky antiferromagnetics gets to be robust with decreasing of temperature. The slopes of the abnormal Hall curves coincide with the signs of SMR, confirming variational interface magnetism of Cr2O3 at different temperature. From the observed SMR ratio under 3 T, the spin mixing conductance at Cr2O3/Ta interface is estimated to be 1.12*10^14 (ohm^-1*m^-2), which is comparable to that of YIG/Pt structures and our early results of Cr2O3/W. (Appl. Phys. Lett. 110, 262401 (2017))
A short review paper for the quantum anomalous Hall effect. A substantially extended one is published as Adv. Phys. 64, 227 (2015).
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