The composition dependence of the structural, magnetic, and transport properties of epitaxially grown Mn-Co-Ga films were investigated. The crystal structure was observed to change from tetragonal to cubic as the Co content was increased. In terms of the dependence of saturation magnetization on the Co content, relatively small value was obtained for the Mn$_{2.3}$Co$_{0.4}$Ga$_{1.3}$ film at a large {it K}$_textrm u$ value of 9.2 Merg/cm$^3$. Electrical resistivity of Mn-Co-Ga films was larger than that of pure Mn-Ga film. The maximum value of the resistivity was 490 $muOmega$cm for Mn$_{2.2}$Co$_{0.6}$Ga$_{1.2}$ film. The high resistivity of Mn-Co-Ga might be due to the presence of localized electron states in the films due to chemical disordering caused by the Co substitution.
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