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Register a new userHeavy doped ABA stacked trilayer graphene: triple splitting of its Raman G peak
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For the first time, we have observed the obvious triple G peak splitting of ABA stacked trilayer graphene. The G peak splitting can be quantatively understood through the different electron-phonon coupling strength of Ea, Eb and Ea modes. In addition, the fluctuation of G peak position at different sample locations can also be understood from the view of the varied interaction strength among graphene layers of TLG, which is induced by nonuniform hole doping at the microscopic level.
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Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the {pi}-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.
The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find that both the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau level splittings due to a lifting of the valley degeneracy are clearly observed.
The band structure and the optical conductivity of an ABA (Bernal-type) stacked graphene trilayer are calculated. It is shown that, under appropriate doping, a strong resonant peak develops in the optical conductivity, located at the frequency corresponding to approximately 1.4 times the interlayer hopping energy and caused by the nesting of two nearly parabolic bands in the electronic spectrum. The intensity of this resonant absorption can be controlled by adjusting the gate voltage. The effect is robust with respect to increasing temperature.
Layer stacking and crystal lattice symmetry play important roles in the band structure and the Landau levels of multilayer graphene. ABA-stacked trilayer graphene possesses mirror-symmetry-protected monolayer-like and bilayer-like band structures. Broken mirror symmetry by a perpendicular electric field therefore induces hybridization between these bands and various quantum Hall phases emerge. We experimentally explore the evolution of Landau levels in ABA-stacked trilayer graphene under electric field. We observe a variety of valley and orbital dependent Landau level evolutions. These evolutions are qualitatively well explained by considering the hybridization between multiple Landau levels possessing close Landau level indices and the hybridization between every third Landau level orbitals due to the trigonal warping effect. These observations are consistent with numerical calculations. The combination of experimental and numerical analysis thus reveals the entire picture of Landau level evolutions decomposed into the monolayer- and bilayer-like band contributions in ABA-stacked trilayer graphene.
We present a comparative measurement of the G-peak oscillations of phonon frequency, Raman intensity and linewidth in the Magneto-Raman scattering of optical E2g phonons in mechanically exfoliated ABA- and ABC-stacked trilayer graphene (TLG). Whereas in ABA-stacked TLG, we observe magnetophonon oscillations consistent with single-bilayer chiral band doublets, the features are flat for ABC-stacked TLG up to magnetic fields of 9 T. This suppression can be attributed to the enhancement of band chirality that compactifies the spectrum of Landau levels and modifies the magnetophonon resonance properties. The drastically different coupling behaviour between the electronic excitations and the E2g phonons in ABA- and ABC-stacked TLG reflects their different electronic band structures and the electronic Landau level transitions and thus can be another way to determine the stacking orders and to probe the stacking-order-dependent electronic structures. In addition, the sensitivity of the magneto-Raman scattering to the particular stacking order in few layers graphene highlights the important role of interlayer coupling in modifying the optical response properties in van der Waals layered materials.
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