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Oscillations of dissipative resistance of two-dimensional electrons in GaAs quantum wells are observed in response to an electric current I and a strong magnetic field applied perpendicular to the two-dimensional systems. Period of the current-induced oscillations does not depend on the magnetic field and temperature. At a fixed current the oscillations are periodic in inverse magnetic fields with a period that does not depend on dc bias. The proposed model considers spatial variations of electron filling factor, which are induced by the electric current, as the origin of the resistance oscillations.
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Quantum oscillations of nonlinear resistance are investigated in response to electric current and magnetic field applied perpendicular to single GaAs quantum wells with two populated subbands. At small magnetic fields current-induced oscillations appear as Landau-Zener transitions between Landau levels inside the lowest subband. Period of these oscillations is proportional to the magnetic field. At high magnetic fields different kind of quantum oscillations emerges with a period,which is independent of the magnetic field. At a fixed current the oscillations are periodic in inverse magnetic field with a period that is independent of the dc bias. The proposed model considers these oscillations as a result of spatial variations of the energy separation between two subbands induced by the electric current.
Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric field induced Landau-Zener transitions between quantum levels that corresponds to geometric resonances between cyclotron orbits and periodic modulation of electron density of states. Magnetic field tilt inverts these oscillations. Surprisingly the strongest inverted oscillations are observed at a tilt corresponding to nearly absent modulation of the electron density of states in regime of magnetic breakdown of semiclassical electron orbits. This phenomenon establishes an example of quantum resistance oscillations due to Landau quantization, which occur in electron systems with a constant density of states.
The longitudinal resistivity of two dimensional (2D) electrons placed in strong magnetic field is significantly reduced by applied electric field, an effect which is studied in a broad range of magnetic fields and temperatures in GaAs quantum wells with high electron density. The data are found to be in good agreement with theory, considering the strong nonlinearity of the resistivity as result of non-uniform spectral diffusion of the 2D electrons. Inelastic processes limit the diffusion. Comparison with the theory yields the inelastic scattering time of the two dimensional electrons. In the temperature range T=2-10(K) for overlapping Landau levels, the inelastic scattering rate is found to be proportional to T^2, indicating a dominant contribution of the electron-electron scattering to the inelastic relaxation. In a strong magnetic field, the nonlinear resistivity demonstrates scaling behavior, indicating a specific regime of electron heating of well-separated Landau levels. In this regime the inelastic scattering rate is found to be proportional to T^3, suggesting the electron-phonon scattering as the dominant mechanism of the inelastic relaxation.
We investigate the properties of conduction electrons in single-walled armchair carbon nanotubes in the presence of mutually orthogonal electric and magnetic fields transverse to the tubes axis. We find that the fields give rise to an asymmetric dispersion in the right- and left-moving electrons along the tube as well as a band-dependent interaction. We predict that such a nanotube system would exhibit spin-band-charge separation and a band-dependant tunneling density of states. We show that in the quantum dot limit, the fields serve to completely tune the quantum states of electrons added to the nanotube. For each of the predicted effects, we provide examples and estimates that are relevant to experiment.
The artificial gauge field for electrically neutral exciton polaritons devoid from the polarization degree of freedom can be synthesized by means of applying crossed electric and magnetic fields. The appearance of the gauge potential can be ascribed to the motional (magneto-electric) Stark effect which is responsible for the presence of a linear-in-momentum contribution to the exciton kinetic energy. We study the interplay of this phenomenon with the competing effect which arises from the Rabi-splitting renormalization due the reduction of the electron-hole overlap for a moving exciton. Accounting for this mechanism is crucial in the structures with the high ratio of Rabi splitting and the exciton binding energy. Besides, we propose an approach which boosts the gauge field in the considered system. It takes advantage of the crossover from the hydrogen-like exciton to the strongly dipole-polarized exciton state at a specific choice of electric and magnetic fields. The strong sensitivity of the exciton energy to the momentum in this regime leads to the large values of the gauge field. We consider the specific example of a GaAs ring-shape polariton Berry phase interferometer and show that the flux of the effective magnetic field may approach the flux quantum value in the considered crossover regime.
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