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Register a new userQuantum dot occupation and electron dwell time in the cotunneling regime
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We present comparative measurements of the charge occupation and conductance of a GaAs/AlGaAs quantum dot. The dot charge is measured with a capacitively coupled quantum point contact sensor. In the single-level Coulomb blockade regime near equilibrium, charge and conductance signals are found to be proportional to each other. We conclude that in this regime, the two signals give equivalent information about the quantum dot system. Out of equilibrium, we study the inelastic-cotunneling regime. We compare the measured differential dot charge with an estimate assuming a dwell time of transmitted carriers on the dot given by h/E, where E is the blockade energy of first-order tunneling. The measured signal is of a similar magnitude as the estimate, compatible with a picture of cotunneling as transmission through a virtual intermediate state with a short lifetime.
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We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed.
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