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Tunneling conduction in graphene/(poly)vinyl alcohol composites

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 Added by Sreemanta Mitra
 Publication date 2012
  fields Physics
and research's language is English




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Graphene/(Poly)vinyl alcohol (PVA) composite film with thickness $60 mu m$ were synthesized by solidification of a PVA solution comprising of dispersed graphene nanosheets. The close proximity of the graphene sheets enables the fluctuation induced tunneling of electrons to occur from one sheet to another. The dielectric data show that the present system can be simulated to a parallel resistance-capacitor network. The high frequency exponent of the frequency variation of the ac conductivity indicates that the charge carriers move in a two-dimensional space. The sample preparation technique will be helpful for synthesizing flexible conductors.

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The exotic physical properties of graphene have led to intense research activities on the synthesis and characterization of graphene composites during the last decade. In this article the methods developed for preparation of such materials and the different application areas are reviewed. The composites discussed are of two types, viz; graphene/polymer and inorganic/ graphene. The techniques of ex-situ hybridization and in-situ hybridization have been pointed out. Some of the application areas are batteries and ultracapacitor for energy storage and fuel cell and solar cell for energy generation and some of the possible future directions of research have been discussed.
We address local inelastic scattering from vibrational impurity adsorbed onto graphene and the evolution of the local density of electron states near the impurity from weak to strong coupling regime. For weak coupling the local electronic structure is distorted by inelastic scattering developing peaks/dips and steps. These features should be detectable in the inelastic electron tunneling spectroscopy, $d^2I/dV^2$, using local probing techniques. Inelastic Friedel oscillations distort the spectral density at energies close to the inelastic mode. In the strong coupling limit, a local negative $U$-center forms in the atoms surrounding the impurity site. For those atoms, the Dirac cone structure is fully destroyed, that is, the linear energy dispersion as well as the V-shaped local density of electron states is completely destroyed. We further consider the effects of the negative $U$ formation and its evolution from weak to strong coupling. The negative $U$-site effectively acts as local impurity such that sharp resonances appear in the local electronic structure. The main resonances are caused by elastic scattering off the impurity site, and the features are dressed by the presence of vibrationally activated side resonances. Going from weak to strong coupling, changes the local electronic structure from being Dirac cone like including midgap states, to a fully destroyed Dirac cone with only the impurity resonances remaining.
188 - F. T. Vasko 2012
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime of tunneling, which appears due to intersection of electron and hole branches of energy spectrum, are described. Dependencies of tunneling current on concentrations in top and bottom graphene layers, which are governed by the voltages applied through independent contacts and gates, are considered for the back- and double-gated structures. The current-voltage characteristics of the back-gated structure are in agreement with the recent experiment [Science 335, 947 (2012)]. For the double-gated structures, the resonant dissipative tunneling causes a ten times enhancement of response which is important for transistor applications.
The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and hexagonal boron nitride (hBN) tunnel barriers and direct contacts. A DC bias current applied to the injector electrode induces a strong nonlinear bias dependence of the nonlocal spin signal for both MgO and hBN tunnel barriers. Furthermore, this signal reverses its sign at a negative DC bias for both kinds of tunnel barriers. The analysis of the bias dependence for injector electrodes with a wide range of contact resistances suggests that the sign reversal correlates with bias voltage rather than current. We consider different mechanisms for nonlinear bias dependence and conclude that the energy-dependent spin-polarized electronic structure of the ferromagnetic electrodes, rather than the electrical field-induced spin drift effect or spin filtering effect of the tunnel barrier, is the most likely explanation of the experimental observations.
A set of uniform carbon microspheres (CS) whose diameters have the order of $ 0.125 mu m$ to $10 mu m $ was prepared from aqueous sucrose solution by means of hydrothermal carbonization of sugar molecules. A pressed pellet was composed by mixing CSs with polyethylene oxide (PEO). Electrical characterization of the pellet was carried out showing Ohmic current-voltage characteristics and temperature-dependent conductivity in the range $ 80K < T < 300K.$ The conductivity reached a maximum value of $ 0.245 S/cm $ at $ 258K. $ The dependence of conductivity on temperature was theoretically analyzed to determine predominating mechanisms of electron transport. It was shown that thermally-induced electron tunneling between adjacent spheres may take on an important part in the electron transport through the CS/PEO composites.
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