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Optimisation of two-dimensional ion trap arrays for quantum simulation

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 Publication date 2012
  fields Physics
and research's language is English




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The optimisation of two-dimensional (2D) lattice ion trap geometries for trapped ion quantum simulation is investigated. The geometry is optimised for the highest ratio of ion-ion interaction rate to decoherence rate. To calculate the electric field of such array geometries a numerical simulation based on a Biot-Savart like law method is used. In this article we will focus on square, hexagonal and centre rectangular lattices for optimisation. A method for maximising the homogeneity of trapping site properties over an array is presented for arrays of a range of sizes. We show how both the polygon radii and separations scale to optimise the ratio between the interaction and decoherence rate. The optimal polygon radius and separation for a 2D lattice is found to be a function of the ratio between rf voltage and drive frequency applied to the array. We then provide a case study for 171Yb+ ions to show how a two-dimensional quantum simulator array could be designed.



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Quantum simulations of spin systems could enable the solution of problems which otherwise require infeasible classical resources. Such a simulation may be implemented using a well-controlled system of effective spins, such as a two-dimensional lattice of locally interacting ions. We propose here a layered planar rf trap design that can be used to create arbitrary two-dimensional lattices of ions. The design also leads naturally to ease of microfabrication. As a first experimental demonstration, we confine strontium-88 ions in a mm-scale lattice trap and verify numerical models of the trap by measuring the motional frequencies. We also confine 440 nm diameter charged microspheres and observe ion-ion repulsion between ions in neighboring lattice sites. Our design, when scaled to smaller ion-ion distances, is appropriate for quantum simulation schemes, e.g. that of Porras and Cirac (PRL 92 207901 (2004)). We note, however, that in practical realizations of the trap, an increase in the secular frequency with decreasing ion spacing may make a coupling rate that is large relative to the decoherence rate in such a trap difficult to achieve.
Two-dimensional crystals of trapped ions are a promising system with which to implement quantum simulations of challenging problems such as spin frustration. Here, we present a design for a surface-electrode elliptical ion trap which produces a 2-D ion crystal and is amenable to microfabrication, which would enable higher simulated coupling rates, as well as interactions based on magnetic forces generated by on-chip currents. Working in an 11 K cryogenic environment, we experimentally verify to within 5% a numerical model of the structure of ion crystals in the trap. We also explore the possibility of implementing quantum simulation using magnetic forces, and calculate J-coupling rates on the order of 10^3 / s for an ion crystal height of 10 microns, using a current of 1 A.
Microfabricated ion traps are a major advancement towards scalable quantum computing with trapped ions. The development of more versatile ion-trap designs, in which tailored arrays of ions are positioned in two dimensions above a microfabricated surface, would lead to applications in fields as varied as quantum simulation, metrology and atom-ion interactions. Current surface ion traps often have low trap depths and high heating rates, due to the size of the voltages that can be applied to them, limiting the fidelity of quantum gates. Here we report on a fabrication process that allows for the application of very high voltages to microfabricated devices in general and use this advance to fabricate a 2D ion trap lattice on a microchip. Our microfabricated architecture allows for reliable trapping of 2D ion lattices, long ion lifetimes, rudimentary shuttling between lattice sites and the ability to deterministically introduce defects into the ion lattice.
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