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Register a new userPower law Kohn anomalies and the excitonic transition in graphene
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Dirac electrons in graphene in the presence of Coulomb interactions of strength $beta$ have been shown to display power law behavior with $beta$ dependent exponents in certain correlation functions, which we call the mass susceptibilities of the system. In this work, we first discuss how this phenomenon is intimately related to the excitonic insulator transition, showing the explicit relation between the gap equation and response function approaches to this problem. We then provide a general computation of these mass susceptibilities in the ladder approximation, and present an analytical computation of the static exponent within a simplified kernel model, obtaining $eta_0 =sqrt{1-beta/beta_c}$ . Finally we emphasize that the behavior of these susceptibilities provides new experimental signatures of interactions, such as power law Kohn anomalies in the dispersion of several phonons, which could potentially be used as a measurement of $beta$.
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Phonon dispersions generically display non-analytic points, known as Kohn anomalies, due to electron-phonon interactions. We analyze this phenomenon for a zone boundary phonon in undoped graphene. When electron-electron interactions with coupling constant $beta$ are taken into account, one observes behavior demonstrating that the electrons are in a critical phase: the phonon dispersion and lifetime develop power law behavior with $beta$ dependent exponents. The observation of this signature would allow experimental access to the critical properties of the electron state, and would provide a measure of its proximity to an excitonic insulating phase.
The strong long-range Coulomb interaction between massless Dirac fermions in graphene can drive a semimetal-insulator transition. We show that this transition is strongly suppressed when the Coulomb interaction is screened by such effects as disorder, thermal fluctuation, doping, and finite volume. It is completely suppressed once the screening factor $mu$ is beyond a threshold $mu_{c}$ even for infinitely strong coupling. However, such transition is still possible if there is an additional strong contact four-fermion interaction. The differences between screened and contact interactions are also discussed.
We analyze the Coulomb interacting problem in undoped graphene layers by using an excitonic variational ansatz. By minimizing the energy, we derive a gap equation which reproduces and extends known results. We show that a full treatment of the exchange term, which includes the renormalization of the Fermi velocity, tends to suppress the phase transition by increasing the critical coupling at which the excitonic instability takes place.
A correlated material in the vicinity of an insulator-metal transition (IMT) exhibits rich phenomenology and variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems but their origins are as yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr$_3$(Ir$_{1-x}$Ru$_x$)$_2$O$_7$ which drives the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT such as power law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators.
A strong Kohn anomaly in ZrTe_3 is identified in the mostly transverse acoustic phonon branch along the modulation vector q_P with polarization along the a* direction. This soft mode freezes to zero frequency at the transition temperature T_P and the temperature dependence of the frequency is strongly affected by fluctuation effects. Diffuse x-ray scattering of the incommensurate superstructure shows a power law scaling of the intensity and the correlation length that is compatible with an order parameter of dimension n = 2.
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