No Arabic abstract
Compressively strained epitaxial (001) EuTiO3 thin films of tetragonal symmetry have been deposited on (001) (LaAlO3)_0.29-(SrAl_{1/2}Ta_{1/2}O3)_0.71 (LSAT) substrates by reactive molecular-beam epitaxy. Enhancement of the Neel temperature by 1 K with 0.9% compressive strain was revealed. The polar phonons ofthe films have been investigated as a function of temperature and magnetic field by means of infrared reflectance spectroscopy. All three infrared active phonons show strongly stiffened frequencies compared to bulk EuTiO3 in accordance with first principles calculations. The phonon frequencies exhibit gradual softening on cooling leading to an increase in static permittivity. A new polar phonon with frequency near the TO1 soft mode was detected below 150 K. The new mode coupled with the TO1 mode was assigned as the optical phonon from the Brillouin zone edge, which is activated in infrared spectra due to an antiferrodistortive phase transition and due to simultaneous presence of polar and/or magnetic nanoclusters. In the antiferromagnetic phase we have observed a remarkable softening of the lowest-frequency polar phonon under an applied magnetic field, which qualitatively agrees with first principles calculations. This demonstrates the strong spin-phonon coupling in EuTiO3, which is responsible for the pronounced dependence of its static permittivity on magnetic field in the antiferromagnetic phase.
Lattice structure can dictate electronic and magnetic properties of a material. Especially, reconstruction at a surface or heterointerface can create properties that are fundamentally different from those of the corresponding bulk material. We have investigated the lattice structure on the surface and in the thin films of epitaxial SrRuO3 with the film thickness up to 22 pseudo-cubic unit cells (u.c.), using the combination of surface sensitive low energy electron diffraction and bulk sensitive scanning transmission electron microscopy. Our analysis indicates that, in contrast to many perovskite oxides, the RuO6 tilt and rotational distortions appear even in single unit cell SrRuO3 thin films on cubic SrTiO3, while the full relaxation to the bulk-like orthorhombic structure takes 3-4 u.c. from the interface for thicker films. Yet the TiO6 octahedra of the substrate near the interface with SrRuO3 films show no sign of distortion, unlike those near the interface with CaRuO3 films. Two orthogonal in-plane rotated structural domains are identified. These structural distortions are essential for the nature of the thickness dependent transport and magnetism in ultrathin films.
The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant and the more defective films, which were grown at low temperatures show a drastical increase in the dielectric constant up to room temperature. While the atomically-ordered film, which was grown at high temperature doesnt show any considerable change in the dielectric constant in the range from 10 to 300 K. Below 100 K, the effect of strain on the dielectric constant becomes clear. An increase in dielectric permittivity is observed in the strained films while the relaxed film doesnt show any remarkable deviation from its bulk value. The low-temperature dielectric behavior of NiO thin film can be interpreted based on the effect of strain on the lattice dynamics of rocksalt binary oxides.
Recently, nanolaminated ternary carbides have attracted immense interest due to the concomitant presence of both ceramic and metallic properties. Here, we grow nanolaminate Ti3AlC2 thin films by pulsed laser deposition on c-axis-oriented sapphire substrates and, surprisingly, the films are found to be highly oriented along the (103) axis normal to the film plane, rather than the (000l) orientation. Multiple characterization techniques are employed to explore the structural and chemical quality of these films, the electrical and optical properties, and the device functionalities. The 80-nm thick Ti3AlC2 film is highly conducting at room temperature (resistivity of 50 micro ohm-cm), and a very-low-temperature coefficient of resistivity. The ultrathin (2 nm) Ti3AlC2 film has fairly good optical transparency and high conductivity at room temperature (sheet resistance of 735 ohm). Scanning tunneling microscopy reveals the metallic characteristics (with finite density of states at the Fermi level) at room temperature. The metal-semiconductor junction of the p-type Ti3AlC2 film and n-Si show the expected rectification (diode) characteristics, in contrast to the ohmic contact behavior in the case of Ti3AlC2 on p-Si. A triboelectric-nanogenerator-based touch-sensing device, comprising of the Ti3AlC2 film, shows a very impressive peak-to-peak open-circuit output voltage of 80 V. These observations reveal that pulsed laser deposited Ti3AlC2 thin films have excellent potential for applications in multiple domains, such as bottom electrodes, resistors for high-precision measurements, Schottky diodes, ohmic contacts, fairly transparent ultrathin conductors, and next-generation biomechanical touch sensors for energy harvesting.
We investigated structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga compounds. The crystallinity of the Mn-Fe-Ga thin films was confirmed using x-ray diffraction. X-ray reflection and atomic force microscopy measurements were utilized to investigate the surface properties, roughness, thickness and density of the deposited Mn-Fe-Ga. Depending on the stoichiometry, as well as the used substrates (SrTiO3 (001) and MgO (001)) or buffer layer (TiN) the Mn-Fe-Ga crystallizes in the cubic or the tetragonally distorted phase. Anomalous Hall effect and alternating gradient magnetometry measurements confirmed strong perpendicular magnetocrystalline anisotropy. Low saturation magnetization and hard magnetic behavior was reached by tuning the composition. Temperature dependent anomalous Hall effect measurements in a closed cycle He-cryostat showed a slight increase in coercivity with decreasing temperature (300K to 2K). TiN buffered Mn2.7Fe0.3Ga revealed sharper switching of the magnetization compared to the unbuffered layers.
Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic devices. Thin films of fluorescein were deposited on glass, fluorine-tin-oxide (FTO) coated glass with and without atomically layer deposited (ALD) nanocrystalline 20 nm thick anatase TiO2 coating. Surface topology, absorption and emission spectra of the films depends on their thickness and the material of supporting substrate. On a smooth glass surface the dye initially formes islands before merging into a uniform layer after 5 to 10 monolayers. On FTO covered glass the absorption spectra are similar to fluorescein solution in ethanol. Absorption spectra on ALD-TiO2 is red shifted compared to the film deposited on bare FTO. The corresponding emission spectra at {lambda} = 458 nm excitation show various thickness and substrate dependent features, while the emission of films deposited on TiO2 is quenched due to the effective electron transfer to the semiconductor conduction band.