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Register a new userUnraveling quantum Hall breakdown in bilayer graphene with scanning gate microscopy
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We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of hotspots where the conductance is strongly affected by the presence of the tip. Our results are well described by a model based on quantum percolation which relates the points of high responsivity to tip-induced scattering between localized Landau levels.
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We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance under the influence of a local tip-induced potential, we observe ellipses of enhanced conductance as a function of the tip position. These ellipses allow us to infer the location of the localized states and to study their dependence on the displacement field. For large displacement fields, we observe that localized states tend to occur halfway into the channel. All our observations can be well explained within the framework of stochastic Coulomb blockade.
Breakdown of the quantum Hall effect (QHE) is commonly associated with an electric field approaching the inter Landau-level (LL) Zener field, ratio of the Landau gap and cyclotron radius. Eluded in semiconducting heterostructures, in spite of extensive investigation, the intrinsic Zener limit is reported here using high-mobility bilayer graphene and high-frequency current noise. We show that collective excitations arising from electron-electron interactions are essential. Beyond a noiseless ballistic QHE regime a large superpoissonian shot noise signals the breakdown via inter-LL scattering. The breakdown is ultimately limited by collective excitations in a regime where phonon and impurity scattering are quenched. The breakdown mechanism can be described by a Landau critical velocity as it bears strong similarities with the roton mechanism of superfluids.
We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.
We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole doped domain close to one of the metal contacts combined with underlying striations in the local NP.
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in this study, two new effects are clearly identified. Electrostatic screening creates non-overlapping multiple sets of Coulomb rings from a single quantum dot. In double quantum dots, by changing the tip voltage, the interactions between the quantum dots can be tuned from the weak to strong coupling regime.
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