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Register a new userConductance of a STM contact on the surface of a thin film
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The conductance of a contact, having a radius smaller than the Fermi wave length, on the surface of a thin metal film is investigated theoretically. It is shown that quantization of the electron energy spectrum in the film leads to a step-like dependence of differential conductance G(V) as a function of applied bias eV. The distance between neighboring steps in eV equals the energy level spacing due to size quantization. We demonstrate that a study of G(V) for both signs of the voltage maps the spectrum of energy levels above and below Fermi surface in scanning tunneling experiments.
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The Fermi surface of a conventional two-dimensional electron gas is equivalent to a circle, up to smooth deformations that preserve the orientation of the equi-energy contour. Here we show that a Weyl semimetal confined to a thin film with an in-plane magnetization and broken spatial inversion symmetry can have a topologically distinct Fermi surface that is twisted into a $mbox{figure-8}$ $-$ opposite orientations are coupled at a crossing which is protected up to an exponentially small gap. The twisted spectral response to a perpendicular magnetic field $B$ is distinct from that of a deformed Fermi circle, because the two lobes of a mbox{figure-8} cyclotron orbit give opposite contributions to the Aharonov-Bohm phase. The magnetic edge channels come in two counterpropagating types, a wide channel of width $beta l_m^2propto 1/B$ and a narrow channel of width $l_mpropto 1/sqrt B$ (with $l_m=sqrt{hbar/eB}$ the magnetic length and $beta$ the momentum separation of the Weyl points). Only one of the two is transmitted into a metallic contact, providing unique magnetotransport signatures.
Epitaxial thin films of CuMnAs have recently attracted attention due to their potential to host relativistic antiferromagnetic spintronics and exotic topological physics. Here we report on the structural and electronic properties of a tetragonal CuMnAs thin film studied using scanning tunneling microscopy (STM) and density functional theory (DFT). STM reveals a surface terminated by As atoms, with the expected semi-metallic behavior. An unexpected zigzag step edge surface reconstruction is observed with emerging electronic states below the Fermi energy. DFT calculations indicate that the step edge reconstruction can be attributed to an As deficiency that results in changes in the density of states of the remaining As atoms at the step edge. This understanding of the surface structure and step edges on the CuMnAs thin film will enable in-depth studies of its topological properties and magnetism.
We present a study of the influence of an external magnetic field H and an electric current I on the spin-valve (SV) effect between a ferromagnetic thin film (F) and a sharp tip of a nonmagnetic metal (N). To explain our observations, we propose a model of a local surface SV which is formed in such a N/F contact. In this model, a ferromagnetic cluster at the N/F interface plays the role of the free layer in this SV. This cluster exhibits a larger coercive field than the bulk of the ferromagnetic film, presumably due to its nanoscale nature. Finally, we construct a magnetic state diagram of the surface SV as a function of I and H.
Asymmetric electrical conductance is theoretically demonstrated on the surface of a topological insulator (TI) in the limit of infinitesimally small forward and reverse biases between two spin selective electrodes. The discontinuous behavior relies on the spin-momentum interlocked nature of TI surface electrons together with the resulting imbalance in the coupling coefficients between the electrodes and TI surface states. The analysis is based on a transmission matrix model that, in combination with a phenomenological treatment for the diffusive limit, accounts for both ballistic and scattered paths simultaneously. With the estimated conductance asymmetry over a factor of 10, implementation in the ratchet-like applications and low-voltage rectification circuits appears practicable.
We theoretically investigate the effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulator. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrier, the transport processes can be divided into three kinds: the total, partial and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a giant effect of negative differential conductance. With appropriate structural parameters, the current-voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltage, and a large peak-to-valley current ratio can be obtained.
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