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Register a new userA New Full Adder Cell for Molecular Electronics
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Added by
Keivan Navi
Publication date
2012
fields
Informatics Engineering
and research's language is
English
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Due to high power consumption and difficulties with minimizing the CMOS transistor size, molecular electronics has been introduced as an emerging technology. Further, there have been noticeable advances in fabrication of molecular wires and switches and also molecular diodes can be used for designing different logic circuits. Considering this novel technology, we use molecules as the active components of the circuit, for transporting electric charge. In this paper, a full adder cell based on molecular electronics is presented. This full adder is consisted of resonant tunneling diodes and transistors which are implemented via molecular electronics. The area occupied by this kind of full adder would be much times smaller than the conventional designs and it can be used as the building block of more complex molecular arithmetic circuits.
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Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large-scale look-up tables or for sequential logic operations. However, without additional selector devices these approaches are not suited for use in large scale nanocrossbar memory arrays, which is the preferred architecture for ReRAM devices due to the minimum area consumption. To overcome this issue for the sequential logic approach, we recently introduced a novel concept, which is suited for passive crossbar arrays using complementary resistive switches (CRSs). CRS cells offer two high resistive storage states, and thus, parasitic sneak currents are efficiently avoided. However, until now the CRS-based logic-in-memory approach was only shown to be able to perform basic Boolean logic operations using a single CRS cell. In this paper, we introduce two multi-bit adder schemes using the CRS-based logic-in-memory approach. We proof the concepts by means of SPICE simulations using a dynamical memristive device model of a ReRAM cell. Finally, we show the advantages of our novel adder concept in terms of step count and number of devices in comparison to a recently published adder approach, which applies the conventional ReRAM-based sequential logic concept introduced by Borghetti et al.
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Erroneous submission in violation of copyright removed by arXiv admin.
Quantum dot Cellular Automata (QCA) is a novel and potentially attractive technology for implementing computing architectures at the nanoscale. The basic Boolean primitive in QCA is the majority gate. In this paper we present a novel design for QCA cells and another possible and unconventional scheme for majority gates. By applying these items, the hardware requirements for a QCA design can be reduced and circuits can be simpler in level and gate counts. As an example, a 1-bit QCA adder is constructed by applying our new scheme and is compared to the other existing implementation. Beside, some Boolean functions are expressed as examples and it has been shown, how our reduction method by using new proposed item, decreases gate counts and levels in comparison to the other previous methods.
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