We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with lifetimes of ~200 ps. We fabricate photonic crystal cavities which provide enhanced outcoupling of quantum dot emission, allowing the observation of narrow lines indicative of single quantum dot emission. This materials system is compatible with monolithic integration on Si, and is promising for high efficiency detection of single quantum dot emission as well as optoelectronic devices emitting at visible wavelengths.
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