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Register a new userDimensionality Control of Electronic Phase Transitions in Nickel-Oxide Superlattices
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The competition between collective quantum phases in materials with strongly correlated electrons depends sensitively on the dimensionality of the electron system, which is difficult to control by standard solid-state chemistry. We have fabricated superlattices of the paramagnetic metal LaNiO3 and the wide-gap insulator LaAlO3 with atomically precise layer sequences. Using optical ellipsometry and low-energy muon spin rotation, superlattices with LaNiO3 as thin as two unit cells are shown to undergo a sequence of collective metalinsulator and antiferromagnetic transitions as a function of decreasing temperature, whereas samples with thicker LaNiO3 layers remain metallic and paramagnetic at all temperatures. Metal-oxide superlattices thus allow control of the dimensionality and collective phase behavior of correlated-electron systems.
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We have investigated two-dimensional thermoelectric properties in transition metal oxide heterostructures. In particular, we adopted an unprecedented approach to direct tuning of the 2D carrier density using fractionally {delta}-doped oxide superlattices. By artificially controlling the carrier density in the 2D electron gas that emerges at a LaxSr1-xTiO3 {delta}-doped layer, we demonstrate that a thermopower as large as 408 {mu}V K-1 can be reached. This approach also yielded a power factor of the 2D carriers 117 {mu}Wcm-1K-2, which is one of the largest reported values from transition metal oxide based materials. The promising result can be attributed to the anisotropic band structure in the 2D system, indicating that {delta}-doped oxide superlattices can be a good candidate for advanced thermoelectrics.
Manipulating the orbital state in a strongly correlated electron system is of fundamental and technological importance for exploring and developing novel electronic phases. Here, we report an unambiguous demonstration of orbital occupancy control between t2g and eg multiplets in quasi-twodimensional transition metal oxide superlattices (SLs) composed of a Mott insulator LaCoO3 and a band insulator LaAlO3. As the LaCoO3 sublayer thickness approaches its fundamental limit (i.e. one unit-cell-thick), the electronic state of the SLs changed from a Mott insulator, in which both t2g and eg orbitals are partially filled, to a band insulator by completely filling (emptying) the t2g (eg) orbitals. We found the reduction of dimensionality has a profound effect on the electronic structure evolution, which is, whereas, insensitive to the epitaxial strain. The remarkable orbital controllability shown here offers a promising pathway for novel applications such as catalysis and photovoltaics, where the energy of d level is an essential parameter.
A 2D electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional delta-doping to control the interfaces composition in LaxSr1-xTiO3/SrTiO3 artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.
Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstructions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics.
We investigate the electronic and structural changes at the nanoscale in vanadium dioxide (VO2) in the vicinity of its thermally driven phase transition. Both electronic and structural changes exhibit phase coexistence leading to percolation. In addition, we observe a dichotomy between the local electronic and structural transitions. Nanoscale x-ray diffraction reveals local, non-monotonic switching of the lattice structure, a phenomenon that is not seen in the electronic insulator-to-metal transition mapped by near-field infrared microscopy.
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