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Register a new userSubband structure of a two-dimensional electron gas formed at the polar surface of the strong spin-orbit perovskite KTaO$_3$
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We demonstrate the formation of a two-dimensional electron gas (2DEG) at the $(100)$ surface of the $5d$ transition-metal oxide KTaO$_3$. From angle-resolved photoemission, we find that quantum confinement lifts the orbital degeneracy of the bulk band structure and leads to a 2DEG composed of ladders of subband states of both light and heavy carriers. Despite the strong spin-orbit coupling, our measurements provide a direct upper bound for potential Rashba spin splitting of only $Delta{k}_parallelsim0.02$ AA$^{-1}$ at the Fermi level. The polar nature of the KTaO$_3(100)$ surface appears to help mediate formation of the 2DEG as compared to non-polar SrTiO$_3(100)$.
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Two-dimensional electron gases (2DEGs) in SrTiO$_3$ have become model systems for engineering emergent behaviour in complex transition metal oxides. Understanding the collective interactions that enable this, however, has thus far proved elusive. Here we demonstrate that angle-resolved photoemission can directly image the quasiparticle dynamics of the $d$-electron subband ladder of this complex-oxide 2DEG. Combined with realistic tight-binding supercell calculations, we uncover how quantum confinement and inversion symmetry breaking collectively tune the delicate interplay of charge, spin, orbital, and lattice degrees of freedom in this system. We reveal how they lead to pronounced orbital ordering, mediate an orbitally-enhanced Rashba splitting with complex subband-dependent spin-orbital textures and markedly change the character of electron-phonon coupling, co-operatively shaping the low-energy electronic structure of the 2DEG. Our results allow for a unified understanding of spectroscopic and transport measurements across different classes of SrTiO$_3$-based 2DEGs, and yield new microscopic insights on their functional properties.
The interaction between a single hole and a two-dimensional, paramagnetic, homogeneous electron gas is studied using diffusion quantum Monte Carlo simulations. Calculations of the electron-hole correlation energy, pair-correlation function, and the electron-hole center-of-mass momentum density are reported for a range of electron--hole mass ratios and electron densities. We find numerical evidence of a crossover from a collective Mahan exciton to a trion-dominated state in a density range in agreement with that found in recent experiments on quantum well heterostructures.
We employed first-principles density-functional theory (DFT) calculations to characterize Dirac electrons in quasi-two-dimensional molecular conductor $alpha$-(BETS)$_2$I$_3$ [= $alpha$-(BEDT-TSeF)$_2$I$_3$] at a low temperature of 30K. We provide a tight-binding model with intermolecular transfer energies evaluated from maximally localized Wannier functions, where the number of relevant transfer integrals is relatively large due to the delocalized character of Se $p$ orbitals. The spin-orbit coupling gives rise to an exotic insulating state with an indirect band gap of about 2 meV. We analyzed the energy spectrum with a Dirac cone close to the Fermi level to develop an effective Hamiltonian with site-potentials, which reproduces the spectrum obtained by the DFT band structure.
We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by scanning tunneling spectroscopy, showing that 4 unit cells SrIrO$_3$ is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO$_3$ is accompanied by antiferromagnetic order.
The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO$_3$ upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the observation of room-temperature ferromagnetism in BaSnO$_3$ thin films and the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO$_3$ via oxygen vacancy creation, which exhibits a high carrier density of $sim 7.72*10^{14} /{rm cm}^2$ and a high room-temperature mobility of ~18 cm$^2$/V/s. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of 350% (more than 540 kOhm/Square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.
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