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Register a new userCurrent driven pinning strength in the vortex lattice of Nb3Sn aided by a small oscillating magnetic field
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By the application of a small oscillating magnetic field parallel to the main magnetic field and perpendicular to the transport current, we were able to generate a voltage dip in the I-V curves of Nb$_3$Sn similar to the peak-effect pattern observed in earlier resistivity measurements. The pattern was history dependent and exhibited a memory effect. In addition we observed in the I-V curves for a high shaking-field amplitude a step feature of unknown origin.
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We report numerical simulations of a trapped elastic vortex driven by a strong ac magnetic field $H(t)=Hsinomega t$ parallel to the surface of a superconducting film. The surface resistance and the power dissipated by an oscillating vortex perpendicular to the film surface were calculated as functions of $H$ and $omega$ for different spatial distributions, densities, and strengths of pinning centers, including bulk pinning, surface pinning, and cluster pinning. Our simulations were performed for both the Bardeen-Stephen viscous vortex drag and the Larkin-Ovchinnikov (LO) drag coefficient $eta(v)$ decreasing with the vortex velocity $v$. The local residual surface resistance $R_i(H)$ calculated for different statistical realizations of the pinning potential exhibits strong mesoscopic fluctuations caused by local depinning jumps of a vortex segment as $H$ increases, but the global surface resistance $bar{R}_i(H)$ obtained by averaging $R_i(H)$ over different pin configurations increases smoothly with the field amplitude at small $H$ and levels off at higher fields. For strong pinning, the LO decrease of $eta(v)$ with $v$ can result in a nonmonotonic field dependence of $R_i(H)$ which decreases with $H$ at higher fields, but cause a runaway instability of the vortex in a thick film for weak pinning. It is shown that overheating of a single moving vortex can produce the LO-like velocity dependence of $eta(v)$, but can mask the decrease of the surface resistance with $H$ at a higher density of trapped vortices.
The use of artificial defects is known to enhance the superconducting critical parameters of thin films. In the case of conventional superconductors, regular arrays of submicron holes (antidots) substantially increase the critical temperature Tc(H) and critical current Ic(H) for all fields. Using electrical transport measurements, we study the effect of placing an additional small antidot in the unit cell of the array. This composite antidot lattice consists of two interpenetrating antidot square arrays with a different antidot size and the same lattice period. The smaller antidots are located exactly at the centers of the cells of the array of large antidots. We show that the composite antidot lattice can trap a higher number of flux quanta per unit cell inside the antidots, compared to a reference antidot film without the additional small antidots in the center of the cells. As a consequence, the field range in which an enhanced critical current is observed is considerably expanded. Finally, the possible stable vortex lattice patterns at several matching fields are determined by molecular dynamics simulations.
The transport critical current of a Niobium (Nb) thick film has been measured for a large range of magnetic field. Its value and variation are quantitatively described in the framework of the pinning of vortices due to boundary conditions at the rough surface, with a contact angle well explained by the spectral analysis of the surface roughness. Increasing the surface roughness using a Focused Ion Beam results also in an increase of the superficial critical current.
We probe the short-range pinning properties with the application of microwave currents at very high driving frequencies (47.7 GHz) on YBa$_2$Cu$_3$O$_{7-delta}$ films with and without sub-micrometer BaZrO$_3$ inclusions. We explore the temperature and field ranges 60 K$<T<T_c$ and 0$<mu_0H<$0.8 T, with the field applied along the c-axis. The magnetic field induces a much smaller increase of the microwave resistivity, $Delta rho_1(H)+mathrm{i}Delta rho_2(H)$, in YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$ with respect to pure YBa$_2$Cu$_3$O$_{7-delta}$. $Delta rho_1(H)$ is slightly superlinear in pure YBa$_2$Cu$_3$O$_{7-delta}$ (suggesting a possible contribution of thermal activation), but linear or sublinear in YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$ (suggesting a possible suppression of thermal activation as a consequence of BaZrO$_3$ inclusions). These features persist up to close to $T_c$. We discuss our data in terms of the ratio $r=Delta X_s(H)/Delta R_s(H)$ in the framework of the models for the microwave surface impedance in the mixed state. Large $r$ are found in YBa$_2$Cu$_3$O$_{7-delta}$/BaZrO$_3$, with little field dependence. By contrast, smaller values and stronger field dependences are found in pure YBa$_2$Cu$_3$O$_{7-delta}$. We discuss the different field dependence of the pinning constant.
Magnetic skyrmion motion induced by an electric current has drawn much interest because of its application potential in next-generation magnetic memory devices. Recently, unidirectional skyrmion motion driven by an oscillating magnetic field was also demonstrated on large (20 micrometer) bubble domains with skyrmion topology. At smaller length scale which is more relevant to high-density memory devices, we here show by numerical simulation that a skyrmion of a few tens of nanometers could also be driven by high-frequency field oscillations but with the motion direction different from the tilted oscillating field direction. We found that high-frequency field for small size skyrmions could excite skyrmion resonant modes and that a combination of different modes would result in the final skyrmion motion with a helical trajectory. Because this helical motion depends on the frequency of the field, we can control both the speed and the direction of the skyrmion motion, which is a distinguishable characteristic compared with other methods.
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