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Register a new userHelical fluctuations in the Raman response of the topological insulator Bi2Se3
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The topological insulator Bi2Se3 shows a Raman scattering response related to topologically protected surface states amplified by a resonant interband transition. Most significantly this signal has a characteristic Lorentzian lineshape and spin-helical symmetry due to collision dominated scattering of Dirac states at the Fermi level E_F on bulk valence states. Its resonance energy, temperature and doping dependence points to a high selectivity of this process. Its scattering rate (Gamma=40 cm-1=5 meV) is comparable to earlier observations, e.g. in spin-polaron systems. Although the observation of topological surface states in Raman scattering is limited to resonance conditions, this study represents a quite clean case which is not polluted by symmetry forbidden contributions from the bulk
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The electronic structure of Bi2Se3 is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultra-high-vacuum conditions, can be overcome via in-situ potassium deposition. In addition to accurately setting the carrier concentration, new Rashba-like spin-polarized states are induced, with a tunable, reversible, and highly stable spin splitting. Ab-initio slab calculations reveal that these Rashba state are derived from the 5QL quantum-well states. While the K-induced potential gradient enhances the spin splitting, this might be already present for pristine surfaces due to the symmetry breaking of the vacuum-solid interface.
We report crystal growth and Raman spectroscopy characterization of pure and mixed bulk topological insulators. The series comprises of both binary and ternary tetradymite topological insulators. We analyzed in detail the Raman peaks of vibrational modes as out of plane Ag, and in plane Eg for both binary and ternary tetradymite topological insulators. Both out of plane Ag exhibit obvious atomic size dependent peak shifts and the effect is much lesser for the former than the latter. The situation is rather interesting for in plane Eg, which not only shows the shift but rather a broader hump like structure. The de convolution of the same show two clear peaks, which are understood in terms of the presence of separate in plane BiSe and BiTe modes in mixed tetradymite topological insulators. Summarily, various Raman modes of well-characterized pure and mixed topological insulator single crystals are reported and discussed in this article.
The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit.
Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects that are responsible for the bulk conduction and nanoscale potential fluctuation in single crystals of archetypal topological insulator Bi2Se3. Here it is established that the defect concentrations in Bi2Se3 are far above the thermodynamic limit, and that the growth kinetics dominate the observed defect concentrations. Furthermore, through careful control of the synthesis, our tunneling spectroscopy suggests that our best samples are approaching the intrinsic limit with the Fermi level inside the band gap without introducing extrinsic dopants.
Raman experiments on bulk FeSe revealed that the low-frequency part of $B_{1g}$ Raman response $R_{B_{1g}}$, which probes nematic fluctuations, rapidly decreases below the nematic transition at $T_n sim 85$K. Such behavior is usually associated with the gap opening and at a first glance is inconsistent with the fact that FeSe remains a metal below $T_n$, with sizable hole and electron pockets. We argue that the drop of $R_{B_{1g}}$ in a nematic metal comes about because the nematic order drastically changes the orbital content of the pockets and makes them nearly mono-orbital. In this situation $B_{1g}$ Raman response gets reduced by the same vertex corrections that enforce charge conservation. The reduction holds at low frequencies and gives rise to gap-like behavior of $R_{B_{1g}}$, in full agreement with the experimental data.
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