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Register a new userGraphene bubbles with controllable curvature
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Raised above the substrate and elastically deformed areas of graphene in the form of bubbles are found on different substrates. They come in a variety of shapes, including those which allow strong modification of the electronic properties of graphene. We show that the shape of the bubble can be controlled by an external electric field. This effect can be used to make graphene-based adaptive focus lenses.
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The electron transport of different conical valleys is investigated in graphene with extended line-defects. Intriguingly, the electron with a definite incident angle can be completely modulated into one conical valley by a resonator which consists of several paralleling line-defects. The related incident angle can be controlled easily by tuning the parameters of the resonator. Therefore, a controllable 100% valley polarization, as well as the detection of the valley polarization, can be realized conveniently by tuning the number of line-defects and the distance between two nearest neighbouring line-defects. This fascinating finding opens a way to realize the valley polarization by line-defects. With the advancement of experimental technologies, this resonator is promising to be realized and thus plays a key role in graphene valleytronics.
Strain-induced deformations in graphene are predicted to give rise to large pseudomagnetic fields. We examine theoretically the case of gas-inflated bubbles to determine whether signatures of such fields are present in the local density of states. Sharp-edged bubbles are found to induce Friedel-type oscillations which can envelope pseudo-Landau level features in certain regions of the bubble. However, bubbles which minimise interference effects are also unsuitable for pseudo-Landau level formation due to more spatially varying field profiles.
In normal metals, the magnetic-moment of impurity-spins disappears below a characteristic Kondo temperature, TK. This marks the formation of a polarized cloud of conduction band electrons that screen the magnetic moment . In contrast, moments embedded in insulators remain unscreened at all temperatures. This raises the question about the fate of magnetic-moments in intermediate, pseudogap systems, such as graphene. In these systems coupling between the local moment and the conduction band electrons is predicted to drive a quantum phase-transition between a local-moment phase and a Kondo-screened singlet phase as illustrated in Fig. 1A. However, attempts to experimentally confirm these predictions and their intriguing consequences such as the ability to electrostatically tune magnetic-moments, have been elusive. Here we report the observation of Kondo screening and the quantum phase-transition between screened and unscreened phases of vacancy magnetic-moments in graphene. Using scanning-tunneling-microscopy (STM), spectroscopy (STS) and numerical-renormalization-group (NRG) calculations, we identified Kondo-screening by its spectroscopic signature and mapped the quantum phase-transition as a function of coupling strength and chemical potential. We show that the coupling strength can be tuned across this transition by variations in the local curvature and furthermore that the transition makes it possible to turn the magnetic-moment on and off with a gate voltage.
Full experimental control of local spin-charge interconversion is of primary interest for spintronics. Heterostructures combining graphene with a strongly spin-orbit coupled two-dimensional (2D) material enable such functionality by design. Electric spin valve experiments have provided so far global information on such devices, while leaving the local interplay between symmetry breaking, charge flow across the heterointerface and aspects of topology unexplored. Here, we utilize magneto-optical Kerr microscopy to resolve the gate-tunable, local current-induced spin polarisation in graphene/WTe$_2$ van der Waals (vdW) heterostructures. It turns out that even for a nominal in-plane transport, substantial out-of-plane spin accumulation is induced by a corresponding out-of-plane current flow. We develop a theoretical model which explains the gate- and bias-dependent onset and spatial distribution of the massive Kerr signal on the basis of interlayer tunnelling, along with the reduced point group symmetry and inherent Berry curvature of the heterostructure. Our findings unravel the potential of 2D heterostructure engineering for harnessing topological phenomena for spintronics, and constitute an important further step toward electrical spin control on the nanoscale.
We present a numerically efficient technique to evaluate the Greens function for extended two dimensional systems without relying on periodic boundary conditions. Different regions of interest, or `patches, are connected using self energy terms which encode the information of the extended parts of the system. The calculation scheme uses a combination of analytic expressions for the Greens function of infinite pristine systems and an adaptive recursive Greens function technique for the patches. The method allows for an efficient calculation of both local electronic and transport properties, as well as the inclusion of multiple probes in arbitrary geometries embedded in extended samples. We apply the Patched Greens function method to evaluate the local densities of states and transmission properties of graphene systems with two kinds of deviations from the pristine structure: bubbles and perforations with characteristic dimensions of the order of 10-25 nm, i.e. including hundreds of thousands of atoms. The strain field induced by a bubble is treated beyond an effective Dirac model, and we demonstrate the existence of both Friedel-type oscillations arising from the edges of the bubble, as well as pseudo-Landau levels related to the pseudomagnetic field induced by the nonuniform strain. Secondly, we compute the transport properties of a large perforation with atomic positions extracted from a TEM image, and show that current vortices may form near the zigzag segments of the perforation.
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