Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userElectroluminescence from chirality-sorted (9,7)-semiconducting carbon nanotube devices
170
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We have measured the electroluminescence and photoluminescence of (9,7) semiconducting carbon nanotube devices and demonstrate that the electroluminescence wavelength is determined by the nanotubes chiral index (n,m). The devices were fabricated on Si3N4 membranes by dielectrophoretic assembly of tubes from monochiral dispersion. Electrically driven (9,7) devices exhibit a single Lorentzian shaped emission peak at 825 nm in the visible part of the spectrum. The emission could be assigned to the excitonic E22 interband transition by comparison of the electroluminescence spectra with corresponding photoluminescence excitation maps. We show a linear dependence of the EL peak width on the electrical current, and provide evidence for the inertness of Si3N4 surfaces with respect to the nanotubes optical properties.
rate research
Read More
Electroluminescence from individual carbon nanotubes within split-gate devices is investigated. By characterizing the air-suspended nanotubes with photoluminescence spectroscopy, chirality is identified and electroluminescence peaks are assigned. We observe electroluminescence linewidth comparable to photoluminescence, indicating negligible heating and state-mixing effects. Split-gate and bias voltage dependences are consistent with emission from an electrostatically formed $pn$-junction.
We found a giant Seebeck effect in semiconducting single-wall carbon nanotube (SWCNT) films, which exhibited a performance comparable to that of commercial Bi2Te3 alloys. Carrier doping of semiconducting SWCNT films further improved the thermoelectric performance. These results were reproduced well by first-principles transport simulations based on a simple SWCNT junction model. These findings suggest strategies that pave the way for emerging printed, all-carbon, flexible thermoelectric devices.
Optical and electronic phenomena in solids arise from the behaviour of electrons and holes (unoccupied states in a filled electron sea). Electron-hole symmetry can often be invoked as a simplifying description, which states that electrons with energy above the Fermi sea behave the same as holes below the Fermi energy. In semiconductors, however, electron-hole symmetry is generally absent since the energy band structure of the conduction band differs from the valence band. Here we report on measurements of the discrete, quantized-energy spectrum of electrons and holes in a semiconducting carbon nanotube. Through a gate, an individual nanotube is filled controllably with a precise number of either electrons or holes, starting from one. The discrete excitation spectrum for a nanotube with N holes is strikingly similar to the corresponding spectrum for N electrons. This observation of near perfect electron-hole symmetry demonstrates for the first time that a semiconducting nanotube can be free of charged impurities, even in the limit of few-electrons or holes. We furthermore find an anomalously small Zeeman spin splitting and an excitation spectrum indicating strong electron-electron interactions.
A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2).
We have measured the scattering strength of charged impurities on a semiconducting single-walled carbon nanotube with known chirality. The resistivity of the nanotube is measured as a function of the density of adsorbed potassium atoms, enabling the determination of the resistance added by an individual potassium atom. Holes are scattered 37 times more efficiently than electrons by an adsorbed potassium atom. The determined scattering strength is used to reveal the spatial extent and depth of the scattering potential for potassium, a model Coulomb adsorbate. Our result represents an essential experimental input to understand adsorbate-induced scattering and provides a crucial step for paving the way to rational design of nanotube-based sensors.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
