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Register a new userEffective screening and the plasmaron bands in Graphene
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Electron-plasmon coupling in graphene has recently been shown to give rise to a plasmaron quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evaluating the separation of the plasmaron bands from the hole bands using Angle Resolved PhotoEmission Spectroscopy. Comparison with G0W-RPA predictions are used to determine the effective dielectric constant of the underlying substrate layer. We also show that plasmaron and electronic properties of graphene can be independently manipulated, an important aspect of a possible use in plasmaronic devices.
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Ce$_{3}$Al is an archetypal heavy-fermion compound with multiple crystalline phases. Here, we try to investigate its electronic structures in the hexagonal phase ($alpha$-Ce$_{3}$Al) and cubic phase ($beta$-Ce$_{3}$Al) by means of a combination of density functional theory and single-site dynamical mean-field theory. We confirm that the 4$f$ valence electrons in both phases are itinerant, accompanied with strong valence state fluctuations. Their 4$f$ band structures are heavily renormalized by electronic correlations, resulting in large effective electron masses. The Kondo screening in Ce$_{3}$Al would be protracted over a wide range of temperature since the single-impurity Kondo temperature $T_{K}$ is much higher than the coherent Kondo temperature $T^{*}_{K}$. Especially, the crystal structure of $alpha$-Ce$_{3}$Al forms a layered kagome lattice. We observe conspicuous kagome-derived flat bands and Dirac cones (or gaps) in its quasiparticle band structure. Therefore, it is concluded that the hexagonal phase of Ce$_{3}$Al will be a promising candidate of heavy-fermion kagome metal.
For a general class of conducting polymers with arbitrary large unit cell and different on-site Coulomb repulsion values on different type of sites, I demonstrate in exact terms the emergence possibility of an upper, interaction created effective flat band. This last appears as a consequence of a kinetic energy quench accompanied by a strong interaction energy decrease, and leads to a non-saturated ferromagnetic state. This ordered state clearly differs from the known flat-band ferromagnetism. This is because it emerges in a system without bare flat bands, requires inhomogeneous on-site Coulomb repulsions values, and possesses non-zero lower interaction limits at the emergence of the ordered phase.
The occurrence of superconducting and insulating phases is well-established in twisted graphene bilayers, and they have also been reported in other arrangements of graphene layers. We investigate three such arrangements: untwisted AB bilayer graphene on an hBN substrate, two graphene bilayers twisted with respect to each other, and a single ABC stacked graphene trilayer on an hBN substrate. Narrow bands with different topology occur in all cases, producing a high density of states which enhances the role of interactions. We investigate the effect of the long range Coulomb interaction, treated within the self consistent Hartree-Fock approximation. We find that the on-site part of the Fock potential strongly modifies the band structure at charge neutrality. The Hartree part does not significantly modify the shape and width of the bands in the three cases considered here, in contrast to the effect that such a potential has in twisted bilayer graphene.
We present infrared spectra (0.1-1 eV) of electrostatically gated bilayer graphene as a function of doping and compare it with tight binding calculations. All major spectral features corresponding to the expected interband transitions are identified in the spectra: a strong peak due to transitions between parallel split-off bands and two onset-like features due to transitions between valence and conduction bands. A strong gate voltage dependence of these structures and a significant electron-hole asymmetry is observed that we use to extract several band parameters. Surprisingly, the structures related to the gate-induced bandgap are much less pronounced in the experiment than predicted by the tight binding model.
Monolayer graphene placed with a twist on top of AB-stacked bilayer graphene hosts topological flat bands in a wide range of twist angles. The dispersion of these bands and gaps between them can be efficiently controlled by a perpendicular electric field, which induces topological transitions accompanied by changes of the Chern numbers. In the regime where the applied electric field induces gaps between the flat bands, we find a relatively uniform distribution of the Berry curvature. Consequently, interaction-induced valley- and/or spin-polarized states at integer filling factors are energetically favorable. In particular, we predict a quantum anomalous Hall state at filling factor $ u=1$ for a range of twist angles $1^circ<theta <1.4^circ$. Furthermore, to characterize the response of the system to magnetic field, we computed the Hofstadter butterfly and the Wannier plot, which can be used to probe the dispersion and topology of the flat bands in this material.
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