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Register a new userAn Investigation of Particle-Hole Asymmetry in the Cuprates via Electronic Raman Scattering
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In this paper we examine the effects of electron-hole asymmetry as a consequence of strong correlations on the electronic Raman scattering in the normal state of copper oxide high temperature superconductors. Using determinant quantum Monte Carlo simulations of the single-band Hubbard model, we construct the electronic Raman response from single particle Greens functions and explore the differences in the spectra for electron and hole doping away from half filling. The theoretical results are compared to new and existing Raman scattering experiments on hole-doped La$_{2-x}$Sr$_{x}$CuO$_{4}$ and electron-doped Nd$_{2-x}$Ce$_{x}$CuO$_{4}$. These findings suggest that the Hubbard model with fixed interaction strength qualitatively captures the doping and temperature dependence of the Raman spectra for both electron and hole doped systems, indicating that the Hubbard parameter U does not need to be doping dependent to capture the essence of this asymmetry.
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The three-band model relevant to high temperature copper-oxide superconductors is solved using single-site dynamical mean field theory and a tight-binding parametrization of the copper and oxygen bands. For a band filling of one hole per unit cell the metal/charge-transfer-insulator phase diagram is determined. The electron spectral function, optical conductivity and quasiparticle mass enhancement are computed as functions of electron and hole doping for parameters such that the corresponding to the paramagnetic metal and charge-transfer insulator sides of the one hole per cell phase diagram. The optical conductivity is computed using the Peierls phase approximation for the optical matrix elements. The calculation includes the physics of Zhang-Rice singlets. The effects of antiferromagnetism on the magnitude of the gap and the relation between correlation strength and doping-induced changes in state density are determined. Three band and one band models are compared. The two models are found to yield quantitatively consistent results for all energies less than about 4eV, including energies in the vicinity of the charge-transfer gap. Parameters on the insulating side of the metal/charge-transfer insulator phase boundary lead to gaps which are too large and near-gap conductivities which are too small relative to data. The results place the cuprates clearly in the intermediate correlation regime, on the paramagnetic metal side of the metal/charge-transfer insulator phase boundary.
Understanding the link between a charge density wave (CDW) instability and superconductivity is a central theme of the 2D metallic kagome compounds $A$V$_3$Sb$_5$ ($A$=K, Rb, and Cs). Using polarization-resolved electronic Raman spectroscopy, we shed light on Fermi surface fluctuations and electronic instabilities. We observe a quasielastic peak (QEP) whose spectral weight is progressively enhanced towards the superconducting transition. The QEP temperature-dependence reveals a steep increase in coherent in-plane charge correlations within the charge-density phase. In contrast, out-of-plane charge fluctuations remain strongly incoherent across the investigated temperature range. In-plane phonon anomalies appear at $T^*sim 50$~K in addition to right below $T_{mathrm{CDW}}sim 95$~K, while showing no apparent evidence of reduced symmetry at low temperatures. In conjunction with the consecutive phonon anomalies within the CDW state, our electronic Raman data unveil additional electronic instabilities that persist down to the superconducting phase, thereby offering a superconducting mechanism.
We investigate the cross-over temperature T* as a function of doping in (Ca_{x}La_{1-x})(Ba_{1.75-x}La_{0.25+x})Cu_3O_{y}, where the maximum Tc (Tc^max) varies continuously by 30% between families (x) with minimal structural changes. T* is determined by DC-susceptibility measurements. We find that T* scales with the maximum Neel temperature TN^max of each family. This result strongly supports a magnetic origin of T*, and indicates that three dimensional interactions play a role in its magnitude.
The low-frequency dielectric response of hole-doped insulators La_{2}Cu_{1-x}Li_{x}O_{4} and La_{2-x}Sr_{x}NiO_{4} shows a large dielectric constant epsilon ^{} at high temperature and a step-like drop by a factor of 100 at a material-dependent low temperature T_{f}. T_{f} increases with frequency and the dielectric response shows universal scaling in a Cole-Cole plot, suggesting that a charge glass state is realized both in the cuprates and in the nickelates.
We apply the recent wavepacket formalism developed by Ossadnik to describe the origin of the short range ordered pseudogap state as the hole doping is lowered through a critical density in cuprates. We argue that the energy gain that drives this precursor state to Mott localization, follows from maximizing umklapp scattering near the Fermi energy. To this end we show how energy gaps driven by umklapp scattering can open on an appropriately chosen surface, as proposed earlier by Yang, Rice and Zhang. The key feature is that the pairing instability includes umklapp scattering, leading to an energy gap not only in the single particle spectrum but also in the pair spectrum. As a result the superconducting gap at overdoping is turned into an insulating pseudogap, in the antinodal parts of the Fermi surface.
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