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Register a new userFirst investigation of a novel 2D position-sensitive semiconductor detector concept
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This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between experimental and simulation results establishes the soundness of resistive charge division method in silicon microstrip sensors and validates the developed simulation as a tool for the optimization of future sensor prototypes. Spatial resolution in the strip length direction depends on the ionizing event position. The average value obtained from the protype analysis is close to 1.2% of the strip length for a 6 MIP signal.
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We report the development of a fast position-sensitive laser beam detector with a bandwidth that exceeds currently available detectors. The detector uses a fiber-optic bundle that spatially splits the incident beam, followed by a fast balanced photo-detector. The detector is applied to the study of Brownian motion of particles on fast time scales with 1 Angstrom spatial resolution. Future applications include the study of molecule motors, protein folding, as well as cellular processes.
The need for precise characterization of dual-phase xenon detectors has grown as the technology has matured into a state of high efficacy for rare event searches. The Michigan Xenon detector was constructed to study the microphysics of particle interactions in liquid xenon across a large energy range in an effort to probe aspects of radiation detection in liquid xenon. We report the design and performance of a small 3D position sensitive dual-phase liquid xenon time projection chamber with high light yield ($L_y^{122}=15.2 $pe/keV at zero field), long electron lifetime ($tau > 200 mu$s), and excellent energy resolution ($sigma/E = 1%$ for 1,333 keV gamma rays in a drift field of 200 V/cm). Liquid xenon time projection chambers with such high energy resolution may find applications not only in dark matter direct detection searches, but also in neutrinoless double beta decay experiments and other applications.
A prototype of a position sensitive photo-detector with 5.6 x 5.6 cm2 detection area readout with 64 Hamamatsu MPPCs (S10931-100P) with 3 x 3 mm2 active area each has been built and tested. The photo-sensors are arranged in a 8 x 8 array with a quadratic mirror light guide on top. The module is currently readout by in-house developed preamplifier boards but employing existing ASIC chips optimized for SiPM readout is also planned. Such a device is one of the candidates to be used for photon detection in the PANDA DIRC detectors.
An improved method of energy calibration of position-sensitive silicon detector is presented. Instead of the parabolic function used in traditional method, a new function describing the relation of position and energy is introduced and achieves better energy resolution. For the 8.088 MeV alpha decay of 213Rn calibrated by this new method, the energy resolution is determined to be about 87 keV (FWHM), which is better than the result of the traditional method, 104 keV (FWHM). In addition, different functions can be tried in the new method, which makes the calibration of various detectors with different performances possible.
In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the E detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a $^{212}$Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.
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