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Register a new userBallistic (precessional) contribution to the conventional magnetic switching
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We consider a magnetic moment with an easy axis anisotropy energy, switched by an external field applied along this axis. Additional small, time-independent bias field is applied perpendicular to the axis. It is found that the magnets switching time is a non-monotonic function of the rate at which the field is swept from up to down. Switching time exhibits a minimum at a particular optimal sweep time. This unusual behavior is explained by the admixture of a ballistic (precessional) rotation of the moment caused by the perpendicular bias field in the presence of a variable switching field. We derive analytic expressions for the optimal switching time, and for the entire dependence of the switching time on the field sweep time. The existence of the optimal field sweep time has important implications for the optimization of magnetic memory devices.
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We consider a switching of the magnetic moment with an easy axis anisotropy from an up to a down direction under the influence of an external magnetic field. The driving field is applied parallel to the easy axis and is continuously swept from a positive to a negative value. In addition, a small constant perpendicular bias field is present. It is shown that while the driving field switches the moment in a conventional way, the perpendicular field creates an admixture of the precessional (ballistic) switching that speeds up the switching process. Precessional contribution produces a non-monotonic dependence of the switching time on the field sweep time with a minimum at a particular sweep time value. We derive an analytic expressions for the optimal point, and for the entire dependence of the switching time on the field sweep time. Our approximation is valid in a wide parameter range and can be used to engineer and optimize of the magnetic memory devices.
Voltage-induced magnetization dynamics in a conically magnetized free layer with an elliptic cylinder shape is theoretically studied on the basis of the macrospin model. It is found that an application of voltage pulse can induce the precessional switching of magnetization even at zero-bias magnetic field, which is of substantial importance for device applications such as voltage-controlled nonvolatile memory. Analytical expressions of the conditions for precessional switching are derived.
We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equal to 0.4 for a CuGe alloy spacer layer, where lambda is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger than those for Cu. The best available model predicts a much greater sensitivity of the switching currents to diffuse scattering in the spacer layer than we see.
By tuning the angle between graphene layers to specific magic angles the lowest energy bands of twisted bilayer graphene (TBLG) can be made flat. The flat nature of the bands favors the formation of collective ground states and, in particular, TBLG has been shown to support superconductivity. When the energy bands participating in the superconductivity are well-isolated, the superfluid weight scales inversely with the effective mass of such bands. For flat-band systems one would therefore conclude that even if superconducting pairing is present most of the signatures of the superconducting state should be absent. This conclusion is at odds with the experimental observations for TBLG. We calculate the superfluid weight for TBLG taking into account both the conventional contribution and the contribution arising from the quantum geometry of the bands. We find that both contributions are larger than one would expect treating the bands as well-isolated, that at the magic angle the geometric contribution is larger than the conventional one, and that for small deviations away from the magic angle the conventional contribution is larger than the geometric one. Our results show that, despite the flatness of the bands the superfluid weight in TBLG is finite and consistent with experimental observations. We also show how the superfluid weight can be tuned by varying the chemical potential and the twist angle opening the possibility to tune the nature of the superconducting transition between the standard BCS transition and the Berezinskii-Kosterlitz-Thouless transition.
We measured the low temperature specific heat of a sputtered $(Fe_{23AA}/Cr_{12AA})_{33}$ magnetic multilayer, as well as separate $1000AA$ thick Fe and Cr films. Magnetoresistance and magnetization measurements on the multilayer demonstrated antiparallel coupling between the Fe layers. Using microcalorimeters made in our group, we measured the specific heat for $4<T<30 K$ and in magnetic fields up to $8 T$ for the multilayer. The low temperature electronic specific heat coefficient of the multilayer in the temperature range $4<T<14 K$ is $gamma_{ML}=8.4 mJ/K^{2}g-at$. This is significantly larger than that measured for the Fe or Cr films (5.4 and $3.5 mJ/K^{2}mol$ respectively). No magnetic field dependence of $gamma_{ML}$ was observed up to $8 T$. These results can be explained by a softening of the phonon modes observed in the same data and the presence of an Fe-Cr alloy phase at the interfaces.
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