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Register a new userFirst principles study of the influence of (110)-oriented strain on the ferroelectric properties of rutile TiO$_2$
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We use first principles density functional theory to investigate the softening of polar phonon modes in rutile TiO$_2$ under tensile (110)-oriented strain. We show that the system becomes unstable against a ferroelectric distortion with polarization along (110) for experimentally accessible strain values. The resulting polarization, estimated from the Born effective charges, even exceeds the bulk polarization of BaTiO$_3$. Our calculations demonstrate the different strain dependence of polar modes polarized along (110) and (001) directions, and we discuss the possibility of strain engineering the polarization direction, and the resulting dielectric and piezoelectric response, in thin films of TiO$_2$ grown on suitable substrates.
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Recent experiments reported giant magnetoresistance at room temperature in LaOMnAs. Here a density functional theory calculation is performed to investigate magnetic properties of LaOMnAs. The ground state is found to be the G-type antiferromagnetic order within the $ab$ plane but coupled ferromagnetically between planes, in agreement with recent neutron investigations. The electronic band structures suggest an insulating state which is driven by the particular G-type magnetic order, while a metallic state accompanies the ferromagnetic order. This relation between magnetism and conductance may be helpful to qualitatively understand the giant magnetoresistance effects.
The hyperfine structure of the interstitial muonium (Mu) in rutile (TiO$_2$, weakly $n$-type) has been identified by means of a muon spin rotation technique. The angle-resolved hyperfine parameters exhibit a tetragonal anisotropy within the $ab$ plane and axial anisotropy with respect to the $langle 001rangle$ ($hat{c}$) axis. This strongly suggests that the Mu is bound to O (forming an OH bond) at an off-center site within a channel along the $hat{c}$ axis, while the unpaired Mu electron is localized around the neighboring Ti site. The hyperfine parameters are quantitatively explained by a model that considers spin polarization of the unpaired electron at both the Ti and O sites, providing evidence for the formation of Mu as a Ti-O-Mu complex paramagnetic state. The disappearance of the Mu signal above $sim$10 K suggests that the energy necessary for the promotion of the unpaired electron to the conduction band by thermal activation is of the order of $10^1$ meV. These observations suggest that, while the electronic structure of Mu (and hence H) differs considerably from that of the conventional shallow level donor described by the effective mass model, Mu supplies a loosely bound electron, and thus, serves as a donor in rutile.
Knowledge of the molecular frontier levels alignment in the ground state can be used to predict the photocatalytic activity of an interface. The position of the adsorbates highest occupied molecular orbital (HOMO) levels relative to the substrates valence band maximum (VBM) in the interface describes the favorability of photogenerated hole transfer from the VBM to the adsorbed molecule. This is a key quantity for assessing and comparing H$_2$O photooxidation activities on two prototypical photocatalytic TiO$_2$ surfaces: anatase (A)-TiO$_2$(101) and rutile (R)-TiO$_2$(110). Using the projected density of states (DOS) from state-of-the-art quasiparticle (QP) $G_0W_0$ calculations, we assess the relative photocatalytic activity of intact and dissociated H$_2$O on coordinately unsaturated (Ti$_{textit{cus}}$) sites of idealized stoichiometric A-TiO$_2$(101)/R-TiO$_2$(110) and bridging O vacancies (O$_{textit{br}}^{textit{vac}}$) of defective A-TiO$_{2-x}$(101)/R-TiO$_{2-x}$(110) surfaces ($x=frac{1}{4},frac{1}{8}$) for various coverages. Such a many-body treatment is necessary to correctly describe the anisotropic screening of electron-electron interactions at a photocatalytic interface, and hence obtain accurate interfacial level alignments. The more favorable ground state HOMO level alignment for A-TiO$_2$(101) may explain why the anatase polymorph shows higher photocatalytic activities than the rutile polymorph. Our results indicate that (1) hole trapping is more favored on A-TiO$_2$(101) than R-TiO$_2$(110) and (2) HO@Ti$_{textit{cus}}$ is more photocatalytically active than intact H$_2$O@Ti$_{textit{cus}}$.
Electronic, magnetic, and transport properties of the antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure, promising for the AFM spintronics, are studied from first principles using the Vienna ab-initio simulation package. We investigate the site-occupation of sublattices and the lattice parameters of three competing phases. We analyze the factors that determine which of the three conceivable structures will prevail. We then estimate formation energies of possible defects for the experimentally prepared lattice structure. Mn$_{rm Cu}$- and Cu$_{rm Mn}$-antisites as well as Mn$leftrightarrow$Cu swaps and vacancies on Mn or Cu sublattices were identified as possible candidates for defects in CuMnAs. We find that the interactions of the growing thin film with the substrate and with vacuum as well as the electron correlations are important for the phase stability while the effect of defects is weak. In the next step, using the tight-binding linear muffin-tin orbital method for the experimental structure, we estimate transport properties for systems containing defects with low formation energies. Finally, we determine the exchange interactions and estimate the Neel temperature of the AFM-CuMnAs alloy using the Monte Carlo approach. A good agreement of the calculated resistivity and Neel temperature with experimental data makes possible to draw conclusions concerning the competing phases.
The electronic and phonon transport properties of quaternary tetradymite BiSbSeTe2 are investigated using first-principles approach and Boltzmann transport theory. Unlike the binary counterpart Bi2Te3, we obtain a pair of Rashba splitting bands induced by the absence of inversion center. Such unique characteristic could lead to a large Seebeck coefficient even at relatively higher carrier concentration. Besides, we find an ultralow lattice thermal conductivity of BiSbSeTe2, especially along the interlayer direction, which can be traced to the extremely small phonon relaxation time mainly induced by the mixed covalent bonds. As a consequence, a considerably large ZT value of ~2.0 can be obtained at 500 K, indicating that the unique lattice structure of BiSbSeTe2 caused by isoelectronic substitution could be an advantage to achieving high thermoelectric performance.
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