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Register a new userIron-chalcogenide FeSe$_{0.5}$Te$_{0.5}$ coated superconducting tapes for high field applications
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The high upper critical field characteristic of the recently discovered iron-based superconducting chalcogenides opens the possibility of developing a new type of non-oxide high-field superconducting wires. In this work, we utilize a buffered metal template on which we grow a textured FeSe$_{0.5}$Te$_{0.5}$ layer, an approach developed originally for high temperature superconducting coated conductors. These tapes carry high critical current densities (>1$times10^{4}$A/cm$^{2}$) at about 4.2K under magnetic field as high as 25 T, which are nearly isotropic to the field direction. This demonstrates a very promising future for iron chalcogenides for high field applications at liquid helium temperatures. Flux pinning force analysis indicates a point defect pinning mechanism, creating prospects for a straightforward approach to conductor optimization.
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We present direct measurements of the superconducting order parameter in nearly optimal FeSe$_{0.5}$Te$_{0.5}$ single crystals with critical temperature $T_C approx 14$ K. Using intrinsic multiple Andreev reflection effect (IMARE) spectroscopy and measurements of lower critical field, we directly determined two superconducting gaps, $Delta_L approx 3.3 - 3.4$ meV and $Delta_S approx 1$ meV, and their temperature dependences. We show that a two-band model fits well the experimental data. The estimated electron-boson coupling constants indicate a strong intraband and a moderate interband interaction.
We have investigated the crystal structures and superconducting properties of thin films of FeSe$_{0.5}$Te$_{0.5}$ grown on eight different substrates. Superconductivity is not correlated with the lattice mismatch; rather it is correlated with the degree of in-plane orientation and with the lattice parameter ratio $c/a$. The best superconducting properties were observed in films on MgO and LaAlO$_3$ ($T_mathrm{c}^mathrm{zero}$ of 9.5 K). TEM observation showed that the presence or absence of an amorphous-like layer at the substrate surface plays a key role in determining the structural and superconducting properties of the grown films.
Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped out. It is found that electron doping controlled by SIC-FET leads to a suppression of the superconducting phase, and eventually gives rise to an insulating state in FeSe$_{0.5}$Te$_{0.5}$. During the gating process, the (001) peak in XRD patterns stays at the same position and no new diffraction peak emerges, indicating no evident Li$^+$ ions intercalation into the FeSe$_{0.5}$Te$_{0.5}$. It indicates that a systematic change of electronic properties in FeSe$_{0.5}$Te$_{0.5}$ arises from the electrostatic doping induced by the accumulation of Li$^+$ ions at the interface between FeSe$_{0.5}$Te$_{0.5}$ and solid ion conductor in the devices. It is striking that these findings are drastically different from the observation in FeSe thin flakes using the same SIC-FET, in which $T_c$ is enhanced from 8 K to larger than 40 K, then the system goes into an insulating phase accompanied by structural transitions.
We present our investigations on the superconducting properties of monolayers of FeSe$_{0.5}$Te$_{0.5}$ grown on the 3D topological insulator Bi$_{2}$Se$_{1.2}$Te$_{1.8}$ using low temperature scanning tunneling spectroscopy (STS). While the morphology and the overall transition temperature resemble those of similarly doped bulk crystals, the spatially resolved spectroscopic data at 1.1K shows a much larger spatial inhomogeneity in the superconducting energy gaps. Despite the gap inhomogeneity all the spectra can be fitted with a two-fold anisotropic s-wave gap function. The two-fold nature of the gap symmetry is evident from the Bogoliubov quasiparticle interference (QPI) pattern which shows distinct C$_{2}$ symmetric scattering intensities. We argue that the gap inhomogeneity emerges as a result of intrinsic disorder in our system similar to disordered conventional superconductors. Even though most of our findings clearly differ from the current understanding of the corresponding bulk system, it provides an ideal platform to study unconventional superconductivity in Fe chalcogenides thinned down to a single layer and in close proximity to a topological insulator.
In-situ epitaxial growth of FeSe$_{0.5}$Te$_{0.5}$ thin films is demonstrated on a non-oxide substrate CaF$_2$. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe$_{0.5}$Te$_{0.5}$, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at $T$ = 4.5 K reaches 5.9 x 10$^4$ Acm$^{-2}$ at $mu_0H$ = 10 T, and 4.2 x 10$^4$ Acm$^{-2}$ at $mu_0H$ = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.
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