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Register a new userQuantum Effects of Strain Influence on the Doping Energy in Semiconductors
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Applying external strain is an efficient way to manipulate the site preference of dopants in semiconductors, however, the validity of the previous continuum elastic model for the strain influence on the doping forma- tion energy is still under debate. In this paper, by combining quantum mechanical theoretical analysis and first-principles calculations, we show that if the occupation change of different orbitals caused by the strain is negligible, the continuum elastic model is valid, otherwise it will fail. Our theory is confirmed by first-principles calculation of Mn-doped GaAs system. Moreover, we show that under compressive strain the hole density, thus the Curie temperature TC can increase in Mn-doped spintronic materials.
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Oxygen vacancy formation energy is an important quantity for enabling fast oxygen diffusion and oxygen catalysis in technologies like solid oxide fuel cells. Both previous literature in various systems and our calculations in LaMnO3, La0.75Sr0.25MnO3, LaFeO3, and La0.75Sr0.25FeO3, show mixed results for the direction and magnitude of the change in vacancy formation energy with strain. This paper develops a model to make sense of the different trend shapes in vacancy formation energy versus strain. We model strain effects using a set of consistent ab initio calculations, and demonstrate that our calculated results may be simply explained in terms of vacancy formation volume and changes in elastic constants between the bulk and defected states. A positive vacancy formation volume contributes to decreased vacancy formation energy under tensile strain, and an increase in elastic constants contributes to increases in vacancy formation energy with compressive and tensile strains, and vice versa. The vacancy formation volume dominates the linear portion of the vacancy formation energy strain response, while its curvature is governed by the vacancy-induced change in elastic constants. We show results sensitive to B-site cation, A-site doping, tilt system, and vacancy placement, which contributions may be averaged under thermally averaged conditions. In general, vacancy formation energies for most systems calculated here decreased with tensile strain, with about a 30-100 meV/% strain decrease with biaxial strain for those systems which showed a decrease in vacancy formation energy. Experimental verification is necessary to confirm the model outside of calculation.
Fast oxygen transport materials are necessary for a range of technologies, including efficient and cost-effective solid oxide fuel cells, gas separation membranes, oxygen sensors, chemical looping devices, and memristors. Strain is often proposed as a method to enhance the performance of oxygen transport materials, but the magnitude of its effect and its underlying mechanisms are not well-understood, particularly in the widely-used perovskite-structured oxygen conductors. This work reports on an ab initio prediction of strain effects on migration energetics for nine perovskite systems of the form LaBO3, where B = [Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Ga]. Biaxial strain, as might be easily produced in epitaxial systems, is predicted to lead to approximately linear changes in migration energy. We find that tensile biaxial strain reduces the oxygen vacancy migration barrier across the systems studied by an average of 66 meV per percent strain for a single selected hop, with a low of 36 and a high of 89 meV decrease in migration barrier per percent strain across all systems. The estimated range for the change in migration barrier within each system is approximately 25 meV per percent strain when considering all hops. These results suggest that strain can significantly impact transport in these materials, e.g., a 2% tensile strain can increase the diffusion coefficient by about three orders of magnitude at 300 K (one order of magnitude at 500 {deg}C or 773 K) for one of the most strain-responsive materials calculated here (LaCrO3). We show that a simple elasticity model, which assumes only dilative or compressive strain in a cubic environment and a fixed migration volume, can qualitatively but not quantitatively model the strain dependence of the migration energy, suggesting that factors not captured by continuum elasticity play a significant role in the strain response.
We explore the charge transport mechanism in organic semiconductors based on a model that accounts for the thermal intermolecular disorder at work in pure crystalline compounds, as well as extrinsic sources of disorder that are present in current experimental devices. Starting from the Kubo formula, we develop a theoretical framework that relates the time-dependent quantum dynamics of electrons to the frequency-dependent conductivity. The electron mobility is then calculated through a relaxation time approximation that accounts for quantum localization corrections beyond Boltzmann theory, and allows us to efficiently address the interplay between highly conducting states in the band range and localized states induced by disorder in the band tails. The emergence of a transient localization phenomenon is shown to be a general feature of organic semiconductors, that is compatible with the bandlike temperature dependence of the mobility observed in pure compounds. Carrier trapping by extrinsic disorder causes a crossover to a thermally activated behavior at low temperature, which is progressively suppressed upon increasing the carrier concentration, as is commonly observed in organic field-effect transistors. Our results establish a direct connection between the localization of the electronic states and their conductive properties, formalizing phenomenological considerations that are commonly used in the literature.
The doping and strain effects on the electron transport of monolayer MoS_2 are systematically investigated using the first-principles calculations with Boltzmann transport theory. We estimate the mobility has a maximum 275 cm^2/(Vs) in the low doping level under the strain-free condition. The applying a small strain (3%) can improve the maximum mobility to 1150 cm^2/(Vs) and the strain effect is more significant in the high doping level. We demonstrate that the electric resistance mainly due to the electron transition between K and Q valleys scattered by the M momentum phonons. However, the strain can effectively suppress this type of electron-phonon coupling by changing the energy difference between the K and Q valleys. This sensitivity of mobility to the external strain may direct the improving electron transport of MoS_2.
We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover this random field can cause a suppression of the total noise power.
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