Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOptical polarization of localized hole spins in p-doped quantum wells
106
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The initialization of spin polarization in localized hole states is investigated using time-resolved Kerr rotation. We find that the sign of the polarization depends on the magnetic field, and the power and the wavelength of the circularly polarized pump pulse. An analysis of the spin dynamics and the spin-initialization process shows that two mechanisms are responsible for spin polarization with opposite sign: The difference of the g factor between the localized holes and the trions, as well as the capturing process of dark excitons by the localized hole states.
rate research
Read More
The paper reports optical orientation experiments performed in the narrow GaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate a control over the spin polarization by means of the optical orientation via the impurity-to-band excitation and observe a sign inversion of the luminescence polarization depending on the pump power. The g factor of a hole localized on the Mn acceptor in the quantum well was also found to be considerably modified from its bulk value due to the quantum confinement effect. This finding shows the importance of the local environment on magnetic properties of the dopants in semiconductor nanostructures.
Irradiating a semiconductor with circularly polarized light creates spin-polarized charge carriers. If the material contains atoms with non-zero nuclear spin, they interact with the electron spins via the hyperfine coupling. Here, we consider GaAs/AlGaAs quantum wells, where the conduction-band electron spins interact with three different types of nuclear spins. The hyperfine interaction drives a transfer of spin polarization to the nuclear spins, which therefore acquire a polarization that is comparable to that of the electron spins. In this paper, we analyze the dynamics of the optical pumping process in the presence of an external magnetic field while irradiating a single quantum well with a circularly polarized laser. We measure the time dependence of the photoluminescence polarization to monitor the buildup of the nuclear spin polarization and thus the average hyperfine interaction acting on the electron spins. We present a simple model that adequately describes the dynamics of this process and is in good agreement with the experimental data.
We propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of thickness of the quantum well may cause a transition of Berry phase in two-dimensional hole gas. Correspondingly, the jump of spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed.
Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to p-type conductance: A very small magnetic field of approximately 70 mT is sufficient to induce a transition into the nu = -1 quantum Hall state, which extends up to at least 10 Tesla. The onset field value remains constant for a unexpectedly wide gate-voltage range. Based on temperature and angle-dependent magnetic field measurements we show that the unusual behavior results from the realization of the quantum anomalous Hall state in these magnetically doped QWs.
By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by holes in the equilibrium. We studied temperature behavior of the Hall effect, variable range hopping conductivity and the photoluminescence spectra of the corresponding structures. The experimental data demonstrated that the binding energy of the A+ states significantly increases with respect to 3D case and strongly depends on well width (9nm,15nm). The localization radii of the A+ states are of the order of well widths.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
