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Register a new userElectron spin-phonon interaction symmetries and tunable spin relaxation in silicon and germanium
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Compared with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin relaxation that counteract the spin degeneracy of the inversion-symmetric system. Here the symmetries of the electron-phonon interaction for silicon and germanium are identified and the resulting spin lifetimes are calculated. Room-temperature spin lifetimes of electrons in silicon are found to be comparable to those in gallium arsenide, however, the spin lifetimes in silicon or germanium can be tuned by reducing the valley degeneracy through strain or quantum confinement. The tunable range is limited to slightly over an order of magnitude by intravalley processes.
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Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant scattering mechanisms are quenched and electrons mainly experience intra-axis scattering processes (intravalley or intervalley scattering within valleys on the same crystal axis). We first derive the spin-flip matrix elements due to intra-axis electron scattering off impurities, and then provide a comprehensive model of the spin relaxation time due to all possible interactions of conduction-band electrons with impurities and phonons. We predict nearly three orders of magnitude improvement in the spin relaxation time of $sim10^{19}text{cm}^{-3}$ antimony-doped silicon (Si:Sb) at low temperatures.
Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield high polarization degree, namely larger than 40%, as well as a fine-tuning of the angular momentum of the emitted light with a complete reversal between right- and left-handed circular polarization. By combining the measurement of the optical polarization state of band-edge luminescence and Monte Carlo simulations of carrier dynamics, we show that these very rich and complex phenomena are the result of the electron thermalization and cooling in the multi-valley conduction band of Ge. The circular polarization of the direct-gap radiative recombination is indeed affected by energy relaxation of hot electrons via the X valleys and the Coulomb interaction with extrinsic carriers. Finally, thermal activation of unpolarized L valley electrons accounts for the luminescence depolarization in the high temperature regime.
Understanding how photoexcited electron dynamics depend on electron-electron (e-e) and electron-phonon (e-p) interaction strengths is important for many fields, e.g. ultrafast magnetism, photocatalysis, plasmonics, and others. Here, we report simple expressions that capture the interplay of e-e and e-p interactions on electron distribution relaxation times. We observe a dependence of the dynamics on e-e and e-p interaction strengths that is universal to most metals and is also counterintuitive. While only e-p interactions reduce the total energy stored by excited electrons, the time for energy to leave the electronic subsystem also depends on e-e interaction strengths because e-e interactions increase the number of electrons emitting phonons. The effect of e-e interactions on energy-relaxation is largest in metals with strong e-p interactions. Finally, the time high energy electron states remain occupied depends only on the strength of e-e interactions, even if e-p scattering rates are much greater than e-e scattering rates.
Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between Zeeman-split levels under an external magnetic field. Our optical experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that approaches the ns regime at room temperature. Besides important insights into nonradiative recombination pathways, our findings disclose a rich spin physics in novel epitaxial structures directly grown on a conventional Si substrate. This introduces a viable route towards the synergic enrichment of the group IV semiconductor toolbox with advanced spintronics and photonic capabilities.
We estimate the spin relaxation rate due to spin-orbit coupling and acoustic phonon scattering in weakly-confined quantum dots with up to five interacting electrons. The Full Configuration Interaction approach is used to account for the inter-electron repulsion, and Rashba and Dresselhaus spin-orbit couplings are exactly diagonalized. We show that electron-electron interaction strongly affects spin-orbit admixture in the sample. Consequently, relaxation rates strongly depend on the number of carriers confined in the dot. We identify the mechanisms which may lead to improved spin stability in few electron (>2) quantum dots as compared to the usual one and two electron devices. Finally, we discuss recent experiments on triplet-singlet transitions in GaAs dots subject to external magnetic fields. Our simulations are in good agreement with the experimental findings, and support the interpretation of the observed spin relaxation as being due to spin-orbit coupling assisted by acoustic phonon emission.
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