We demonstrate a nanostructure composed of partially etched annular trenches in a suspended GaAs membrane, designed for efficient and moderately broadband (approx. 5 nm) emission extraction from single InAs quantum dots. Simulations indicate that a dipole embedded in the nanostructure center radiates upwards into free space with a nearly Gaussian far-field, allowing a collection efficiency > 80 % with a high numerical aperture (NA=0.7) optic, and with 12X Purcell radiative rate enhancement. Fabricated devices exhibit an approx. 10 % photon collection efficiency with a NA=0.42 objective, a 20X improvement over quantum dots in unpatterned GaAs. A fourfold exciton lifetime reduction indicates moderate Purcell enhancement.
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