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Register a new userCharge transport and current fluctuations in bacteriorhodopsin based nanodevices
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Added by
Eleonora Alfinito Dr.
Publication date
2011
fields
Physics
and research's language is
English
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We report on charge transport and current fluctuations in a single bacteriorhodpsin protein in a wide range of applied voltages covering direct and injection tunnelling regimes. The satisfactory agreement between theory and available experiments validates the physical plausibility of the model developed here. In particular, we predict a rather abrupt increase of the variance of current fluctuations in concomitance with that of the I-V characteristic. The sharp increase, for about five orders of magnitude of current variance is associated with the opening of low resistance paths responsible for the sharp increase of the I-V characteristics. A strong non-Gaussian behavior of the associated probability distribution function is further detected by numerical calculations.
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We investigate a particular phase transition between two different tunneling regimes, direct and injection (Fowler-Nordheim), experimentally observed in the current-voltage characteristics of the light receptor bacteriorhodopsin (bR). Here, the sharp increase of the current above about 3 V is theoretically interpreted as the cross-over between the direct and injection sequential-tunneling regimes. Theory also predicts a very special behaviour for the associated current fluctuations around steady state. We find the remarkable result that in a large range of bias around the transition between the two tunneling regimes, the probability density functions can be traced back to the generalization of the Gumbel distribution. This non-Gaussian distribution is the universal standard to describe fluctuations under extreme conditions.
We present a hierarchical quantum master equation (HQME) approach, which allows the numerically exact evaluation of higher-order current cumulants in the framework of full counting statistics for nonequilibrium charge transport in nanosystems. The novel methodology is exemplarily applied to a model of vibrationally coupled electron transport in a molecular nanojunction. We investigate the influence of cotunneling on avalanche-like transport, in particular in the nonresonant transport regime, where we find that inelastic cotunneling acts as trigger process for resonant avalanches. In this regime, we also demonstrate that the correction to the elastic noise upon opening of the inelastic transport channel is strongly affected by the nonequilibrium excitation of the vibration as well as the polaron shift.
Charge migration along DNA molecules has attracted scientific interest for over half a century. Reports on possible high rates of charge transfer between donor and acceptor through the DNA, obtained in the last decade from solution chemistry experiments on large numbers of molecules, triggered a series of direct electrical transport measurements through DNA single molecules, bundles and networks. These measurements are reviewed and presented here. From these experiments we conclude that electrical transport is feasible in short DNA molecules, in bundles and networks, but blocked in long single molecules that are attached to surfaces. The experimental background is complemented by an account of the theoretical/computational schemes that are applied to study the electronic and transport properties of DNA-based nanowires. Examples of selected applications are given, to show the capabilities and limits of current theoretical approaches to accurately describe the wires, interpret the transport measurements, and predict suitable strategies to enhance the conductivity of DNA nanostructures.
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information.
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10$^{6}$ A/cm$^{2}$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
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