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Register a new userEnhanced spontaneous emission from nanodiamond colour centres on opal photonic crystal
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Colour centres in diamond are promising candidates as a platform for quantum technologies and biomedical imaging based on spins and/or photons. Controlling the emission properties of colour centres in diamond is a key requirement for developing efficient single photon sources with high collection efficiency. A number of groups have produced enhancement in the emission rate over narrow wavelength ranges by coupling single emitters in nanodiamond crystals to resonant electromagnetic structures. Here we characterise in detail the spontaneous emission rates of nitrogen-vacancy centres positioned in various locations on a structured substrate. We show an average factor of 1.5 enhancement of the total emission rate when nanodiamonds are on an opal photonic crystal surface, and observe changes in the lifetime distribution. We present a model to explain these observations and associate the lifetime properties with dipole orientation and polarization effects.
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We report a study of the quantum dot emission in short photonic crystal waveguides. We observe that the quantum dot photoluminescence intensity and decay rate are strongly enhanced when the emission energy is in resonance with Fabry-Perot cavity modes in the slow-light regime of the dispersion curve. The experimental results are in agreement with previous theoretical predictions and further supported by three-dimensional finite element simulation. Our results show that the combination of slow group velocity and Fabry-Perot cavity resonance provides an avenue to efficiently channel photons from quantum dots into waveguides for integrated quantum photonic applications.
Using a nanomanipulation technique a nanodiamond with a single nitrogen vacancy center is placed directly on the surface of a gallium phosphide photonic crystal cavity. A Purcell-enhancement of the fluorescence emission at the zero phonon line (ZPL) by a factor of 12.1 is observed. The ZPL coupling is a first crucial step towards future diamond-based integrated quantum optical devices.
Global quantum networks will benefit from the reliable creation and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we demonstrate the reliable creation of high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized $lesssim$100 nm from an interface display ~1 GHz characteristic levels of total spectral diffusion.
We report direct evidence of enhanced spontaneous emission in a photonic crystal (PhC) light-emitting diode. The device consists of p-i-n heterojunction embedded in a suspended membrane, comprising a layer of self-assembled quantum dots. Current is injected laterally from the periphery to the center of the PhC. A well-isolated emission peak at 1300nm from the PhC cavity mode is observed, and the enhancement of the spontaneous emission rate is clearly evidenced by time-resolved electroluminescence measurements, showing that our diode switches off in a time shorter than the bulk radiative and nonradiative lifetimes
Optically active point defects in crystals have gained widespread attention as photonic systems that can find use in quantum information technologies. However challenges remain in the placing of individual defects at desired locations, an essential element of device fabrication. Here we report the controlled generation of single nitrogen-vacancy (NV) centres in diamond using laser writing. The use of aberration correction in the writing optics allows precise positioning of vacancies within the diamond crystal, and subsequent annealing produces single NV centres with up to 45% success probability, within about 200 nm of the desired position. Selected NV centres fabricated by this method display stable, coherent optical transitions at cryogenic temperatures, a pre-requisite for the creation of distributed quantum networks of solid-state qubits. The results illustrate the potential of laser writing as a new tool for defect engineering in quantum technologies.
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