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Fully electrically read-write device out of a ferromagnetic semiconductor

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 Added by Charles Gould
 Publication date 2010
  fields Physics
and research's language is English




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We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.



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Spin-helical states, which arise in quasi-one-dimensional (1D) channels with spin-orbital (SO) coupling, underpin efforts to realize topologically-protected quantum bits based on Majorana modes in semiconductor nanowires. Detecting helical states is challenging due to non-idealities present in real devices. Here we show by means of tight-binding calculations that by using ferromagnetic contacts it is possible to detect helical modes with high sensitivity even in the presence of realistic device effects, such as quantum interference. This is possible because of the spin-selective transmission properties of helical modes. In addition, we show that spin-polarized contacts provide a unique path to investigate the spin texture and spin-momentum locking properties of helical states. Our results are of interest not only for the ongoing development of Majorana qubits, but also as for realizing possible spin-based quantum devices, such as quantum spin modulators and interconnects based on spin-helical channels.
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