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Register a new userSpin-Currents and Spin-Pumping Forces for Spintronics
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A general definition of the Spintronics concept of spin-pumping is proposed as generalized forces conjugated to the spin degrees of freedom in the framework of the theory of mesoscopic non-equilibrium thermodynamics. It is shown that at least three different kinds of spin-pumping forces and associated spin-currents can be defined in the most simple spintronics system (the Ferromagnetic/Non-Ferromagnetic metal interface). Furthermore, the generalized force associated to the ferromagnetic collective variable is also introduced in an equal footing, in order to describe the coexistence of the spin of the conduction electrons (paramagnetic spins attached to $s$-band electrons) and the ferromagnetic-order parameter. The dynamical coupling between these two kinds of magnetic degrees of freedom is presented, and interpreted in terms of spin-transfer effects.
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Electric currents carrying a net spin polarization are widely used in spintronics, whereas globally spin-neutral currents are expected to play no role in spin-dependent phenomena. Here we show that, in contrast to this common expectation, spin-independent conductance in compensated antiferromagnets and normal metals can be efficiently exploited in spintronics, provided their magnetic space group symmetry supports a non-spin-degenerate Fermi surface. Due to their momentum-dependent spin polarization, such antiferromagnets can be used as active elements in antiferromagnetic tunnel junctions (AFMTJs) and produce a giant tunneling magnetoresistance (TMR) effect. Using RuO$_{2}$ as a representative compensated antiferromagnet exhibiting spin-independent conductance along the [001] direction but a non-spin-degenerate Fermi surface, we design a RuO$_{2}$/TiO$_{2}$/RuO$_{2}$ (001) AFMTJ, where a globally spin-neutral charge current is controlled by the relative orientation of the Neel vectors of the two RuO$_{2}$ electrodes, resulting in the TMR effect as large as ~500%. These results are expanded to normal metals which can be used as a counter electrode in AFMTJs with a single antiferromagnetic layer or other elements in spintronic devices. Our work uncovers an unexplored potential of the materials with no global spin polarization for utilizing them in spintronics.
We report on the experimental implementation of a spin pump with ultracold bosonic atoms in an optical superlattice. In the limit of isolated double wells it represents a 1D dynamical version of the quantum spin Hall effect. Starting from an antiferromagnetically ordered spin chain, we periodically vary the underlying spin-dependent Hamiltonian and observe a spin current without charge transport. We demonstrate a novel detection method to measure spin currents in optical lattices via superexchange oscillations emerging after a projection onto static double wells. Furthermore, we directly verify spin transport through in-situ measurements of the spins center of mass displacement.
We propose a method to separate the inverse spin Hall effect (ISHE) from galvanomagnetic effects in spin pumping experiments on metallic bilayer systems by measuring the dc electromotive force in two orthogonal directions. Calculations of dc voltages in longitudinal and Hall directions induced in Ni81Fe19 and Ni81Fe19/Pt films at ferromagnetic resonance in a microwave cavity predict that contributions from ISHE and from the galvanomagnetic effects, i.e. the anisotropic magnetoresistance and the anomalous Hall effect, exhibit distinct signal symmetry as well as angular dependence when changing the direction of the external field with respect to the film plane. According to measurements on Ni81Fe19/Pt, only that dc voltage component which includes ISHE is more than five times larger than purely galvanomagnetic components. This is corroborated by results on La0.67Sr0.33MnO3/Pt samples, demonstrating universality of this method.
We have demonstrated spin pumping from a paramagnetic state of an insulator La2NiMnO6 into a Pt film. Single-crystalline films of La2NiMnO6 which exhibit a ferromagnetic order at TC ~ 270 K were grown by pulsed laser deposition. The inverse spin Hall voltage induced by spin-current injection has been observed in the Pt layer not only in the ferromagnetic phase of La2NiMnO6 but also in a wide temperature range above TC. The efficient spin pumping in the paramagnetic phase is ascribable to ferromagnetic correlation, not to ferromagnetic order.
We investigate the spin Hall effect (SHE) in a wide class of spin-orbit coupling systems by using spin force picture. We derive the general relation equation between spin force and spin current and show that the longitudinal force component can induce a spin Hall current, from which we reproduce the spin Hall conductivity obtained previously using Kubos formula. This simple spin force picture gives a clear and intuitive explanation for SHE.
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