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Register a new userOrientation dependence of the elastic instability on strained SiGe films
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At low strain, SiGe films on Si substrates undergo a continuous nucleationless morphological evolution known as the Asaro-Tiller-Grinfeld instability. We demonstrate experimentally that this instability develops on Si(001) but not on Si(111) even after long annealing. Using a continuum description of this instability, we determine the origin of this difference. When modeling surface diffusion in presence of wetting, elasticity and surface energy anisotropy, we find a retardation of the instability on Si(111) due to a strong dependence of the instability onset as function of the surface stiffness. This retardation is at the origin of the inhibition of the instability on experimental time scales even after long annealing.
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An equilibrium phase diagram for the shape of compressively strained free-hanging films is developed by total strain energy minimization. For small strain gradients {Delta}{epsilon}, the film wrinkles, while for sufficiently large {Delta}{epsilon}, a phase transition from wrinkling to bending occurs. We consider competing relaxation mechanisms for free-hanging films, which have rolled up into tube structures, and we provide an upper limit for the maximum achievable number of tube rotations.
PbTiO$_3$ is a simple but very important ferroelectric oxide that has been extensively studied and widely used in various technological applications. However, most previous studies and applications were based on the bulk material or the conventional [$001$]-orientated films. There are few studies on PbTiO$_3$ films grown along other crystalline axes. In this study, a first-principles calculation was performed to compute the polarization of PbTiO$_3$ films strained by SrTiO$_3$ and LaAlO$_3$ substrates. Our results show that the polarization of PbTiO$_3$ films strongly depends on the growth orientation as well as the monoclinic angles. Further, it is suggested that the ferroelectricity of PbTiO$_3$ mainly depends on the tetragonality of the lattice, instead of the simple strain.
We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly through the elastic relaxation of step-edge protrusions during the unstable step-flow growth. As the substrate misorientation is increased, the islands undergo a shape transformation which is driven by surface energy minimization and controlled by the miscut angle. Using finite element simulations, we show that the dynamics of islanding observed in the experiment results from the anisotropy of the strain relaxation.
The strain tuned magnetism of YTiO$_3$ film grown on the LaAlO$_3$ ($110$) substrate is studied by the method of the first principles, and compared with that of the ($001$)-oriented one. The obtained magnetism is totally different, which is ferromagnetic for the film on the ($110$) substrate but A-type antiferromagnetic on the ($001$) one. This orientation-dependent magnetism is attributed to the subtle orbital ordering of YTiO$_3$ film. The $d_{xz}$/$d_{yz}$-type orbital ordering is predominant for the ($001$) one, but for the ($110$) case, the $d_{xy}$ orbital is mostly occupied plus a few contribution from the $d_{xz}$/$d_{yz}$ orbital. Moreover, the lattice mismatch is modest for the ($110$) case but more serious for the ($001$) one, which is also responsible for this contrasting magnetism.
Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quantum dot to qubit logic demonstrations. Here we present a measurement of the out-of-plane $g$-factor for single-hole quantum dots in this material. As this is a single-hole measurement, this is the first experimental result that avoids the strong orbital effects present in the out-of-plane configuration. In addition to verifying the expected $g$-factor anisotropy between in-plane and out-of-plane magnetic ($B$)-fields, variations in the $g$-factor dependent on the occupation of the quantum dot are observed. These results are in good agreement with calculations of the $g$-factor using the heavy- and light-hole spaces of the Luttinger Hamiltonian, especially the first two holes, showing a strong spin-orbit coupling and suggesting dramatic $g$-factor tunability through both the $B$-field and the charge state.
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