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Singular electrostatic energy of nanoparticle clusters

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 Added by Nathan Krapf
 Publication date 2010
  fields Physics
and research's language is English




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The binding of clusters of metal nanoparticles is partly electrostatic. We address difficulties in calculating the electrostatic energy when high charging energies limit the total charge to a single quantum, entailing unequal potentials on the particles. We show that the energy at small separation $h$ has a strong logarithmic dependence on $h$. We give a general law for the strength of this logarithmic correction in terms of a) the energy at contact ignoring the charge quantization effects and b) an adjacency matrix specifying which spheres of the cluster are in contact and which is charged. We verify the theory by comparing the predicted energies for a tetrahedral cluster with an explicit numerical calculation.



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The binding of clusters of metal nanoparticles is partly electrostatic. We address difficulties in calculating the electrostatic energy when high charging energies limit the total charge to a single quantum, entailing unequal potentials on the particles. We show that the energy at small separation $h$ has a singular logarithmic dependence on $h$. We derive a general form for this energy in terms of the singular capacitance of two spheres in near contact $c(h)$, together with nonsingular geometric features of the cluster. Using this form, we determine the energies of various clusters, finding that more compact clusters are more stable. These energies are proposed to be significant for metal-semiconductor binary nanoparticle lattices found experimentally. We sketch how these effects should dictate the relative abundances of metal nanoparticle clusters in nonpolar solvents.
Electrostatic reaction inhibition in heterogeneous catalysis emerges if charged reactants and products are adsorbed on the catalyst and thus repel the approaching reactants. In this work, we study the effects of electrostatic inhibition on the reaction rate of unimolecular reactions catalyzed on the surface of a spherical model nanoparticle by using particle-based reaction-diffusion simulations. Moreover, we derive closed rate equations based on approximate Debye-Smoluchowski rate theory, valid for diffusion-controlled reactions, and a modified Langmuir adsorption isotherm, relevant for reaction-controlled reactions, to account for electrostatic inhibition in the Debye-Huckel limit. We study the kinetics of reactions ranging from low to high adsorptions on the nanoparticle surface and from the surface- to diffusion-controlled limits for charge valencies 1 and 2. In the diffusion-controlled limit, electrostatic inhibition drastically slows down the reactions for strong adsorption and low ionic concentration, which is well described by our theory. In particular, the rate decreases with adsorption affinity, because in this case the inhibiting products are generated at high rate. In the (slow) reaction-controlled limit, the effect of electrostatic inhibition is much weaker, as semi-quantitatively reproduced by our electrostatic-modified Langmuir theory. We finally propose and verify a simple interpolation formula that describes electrostatic inhibition for all reaction speeds (`diffusion-influenced reactions) in general.
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Devices made from two dimensional materials such as graphene and transition metal dichalcogenides exhibit remarkable electronic properties of interest to many subdisciplines of nanoscience. Owing to their 2D nature, their quality is highly susceptible to contamination and degradation when exposed to the ambient environment. Protecting the 2D layers by encapsulation between hexagonal boron nitride layers significantly improves their quality. Locating these samples within the encapsulant and assessing their integrity prior to further processing then becomes challenging. Here we show that conductive scanning probe techniques such as electrostatic force and Kelvin force microscopy makes it possible to visualize the encapsulated layers, their charge environment and local defects including cracks and bubbles on the sub-micrometer scale. Our techniques are employed without requiring electrical contact to the embedded layer, providing valuable feedback on the local electronic quality prior to any device etching or electrode deposition. We show that these measurement modes, which are simple extensions of atomic force microscopy, are perfectly suited for imaging encapsulated conductors and their local charge environments.
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