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Register a new userNon-equilibrium many-particle spin states in self-assembled quantum dot hydrogen, helium and lithium
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We introduce an all-electrical measurement technique, which makes it possible to prepare and detect the ground and excited many-particle states in self-assembled InAs QDs at 4K. This way, the pure-electron spectra of QD-hydrogen, -helium and -lithium are resolved. Comparison with detailed many-body calculations enables us to identify the different charge configurations and in particular detect the singlet and triplet spin states of QD helium. Furthermore, the time-resolved evolution of the density of states from non-equilibrium to equilibrium charge occupation is shown.
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Lateral quantum dot molecules consist of at least two closely-spaced InGaAs quantum dots arranged such that the axis connecting the quantum dots is perpendicular to the growth direction. These quantum dot complexes are called molecules because the small spacing between the quantum dots is expected to lead to the formation of molecular-like delocalized states. We present optical spectroscopy of ensembles and individual lateral quantum dot molecules as a function of electric fields applied along the growth direction. The results allow us to characterize the energy level structure of lateral quantum dot molecules and the spectral signatures of both charging and many-body interactions. We present experimental evidence for the existence of molecular-like delocalized states for electrons in the first excited energy shell.
Anisotropy of spin-orbit interaction (SOI) is studied for a single uncapped InAs self-assembled quantum dot (SAQD) holding just a few electrons. The SOI energy is evaluated from anti-crossing or SOI induced hybridization between the ground and excited states with opposite spins. The magnetic angular dependence of the SOI energy falls on an absolute cosine function for azimuthal rotation, and a cosine-like function for tilting rotation. The SOI energy is even quenched at a specific rotation. These angular dependence compare well to calculation of Rashba SOI in a two-dimensional harmonic potential.
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.
We present a theory and experiment demonstrating optical readout of charge and spin in a single InAs/GaAs self-assembled quantum dot. By applying a magnetic field we create the filling factor 2 quantum Hall singlet phase of the charged exciton. Increasing or decreasing the magnetic field leads to electronic spin-flip transitions and increasing spin polarization. The increasing total spin of electrons appears as a manifold of closely spaced emission lines, while spin flips appear as discontinuities of emission lines. The number of multiplets and discontinuities measures the number of carriers and their spin. We present a complete analysis of the emission spectrum of a single quantum dot with N=4 electrons and a single hole, calculated and measured in magnetic fields up to 23 Tesla.
The four-level exciton/biexciton system of a single semiconductor quantum dot acts as a two qubit register. We experimentally demonstrate an exciton-biexciton Rabi rotation conditional on the initial exciton spin in a single InGaAs/GaAs dot. This forms the basis of an optically gated two-qubit controlled-rotation (CROT) quantum logic operation where an arbitrary exciton spin is selected as the target qubit using the polarization of the control laser.
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