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Register a new userOperating quantum waveguide circuits with superconducting single-photon detectors
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Advanced quantum information science and technology (QIST) applications place exacting de- mands on optical components. Quantum waveguide circuits offer a route to scalable QIST on a chip. Superconducting single-photon detectors (SSPDs) provide infrared single-photon sensitivity combined with low dark counts and picosecond timing resolution. In this study we bring these two technologies together. Using SSPDs we observe a two-photon interference visibility of 92.3pm1.0% in a silica-on-silicon waveguide directional coupler at lamda = 804 nm-higher than that measured with silicon detectors (89.9pm0.3%). We further operated controlled-NOT gate and quantum metrology circuits with SSPDs. These demonstrations present a clear path to telecom-wavelength quantum waveguide circuits.
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The generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical circuits and single-photon detectors enables quantum repeaters and qubit amplifiers, and also forms the basis of all-optical quantum gates and of linear-optics quantum computing. However, the monolithic integration of sources, waveguides and detectors on the same chip, as needed for scaling to meaningful number of qubits, is very challenging, and previous work on quantum photonic circuits has used external sources and detectors. Here we propose an approach to a fully-integrated quantum photonic circuit on a semiconductor chip, and demonstrate a key component of such circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (20%) at telecom wavelengths, high timing accuracy (60 ps), response time in the ns range, and are fully compatible with the integration of single-photon sources, passive networks and modulators.
For photon-counting applications at ultraviolet wavelengths, there are currently no detectors that combine high efficiency (> 50%), sub-nanosecond timing resolution, and sub-Hz dark count rates. Superconducting nanowire single-photon detectors (SNSPDs) have seen success over the past decade for photon-counting applications in the near-infrared, but little work has been done to optimize SNSPDs for wavelengths below 400 nm. Here, we describe the design, fabrication, and characterization of UV SNSPDs operating at wavelengths between 250 and 370 nm. The detectors have active areas up to 56 ${mu}$m in diameter, 70 - 80% efficiency, timing resolution down to 60 ps FWHM, blindness to visible and infrared photons, and dark count rates of ~ 0.25 counts/hr for a 56 ${mu}$m diameter pixel. By using the amorphous superconductor MoSi, these UV SNSPDs are also able to operate at temperatures up to 4.2 K. These performance metrics make UV SNSPDs ideal for applications in trapped-ion quantum information processing, lidar studies of the upper atmosphere, UV fluorescent-lifetime imaging microscopy, and photon-starved UV astronomy.
The superconducting nanowire single-photon detector (SNSPD) is a quantum-limit superconducting optical detector based on the Cooper-pair breaking effect by a single photon, which exhibits a higher detection efficiency, lower dark count rate, higher counting rate, and lower timing jitter when compared with those exhibited by its counterparts. SNSPDs have been extensively applied in quantum information processing, including quantum key distribution and optical quantum computation. In this review, we present the requirements of single-photon detectors from quantum information, as well as the principle, key metrics, latest performance issues and other issues associated with SNSPD. The representative applications of SNSPDs with respect to quantum information will also be covered.
We demonstrate waveguide-integrated superconducting nanowire single-photon detectors on thin-film lithium niobate (LN). Using a 250 um-long NbN superconducting nanowire lithographically defined on top of a 125 um-long LN nanowaveguide, on-chip detection efficiency of 46% is realized with simultaneous high performance in dark count rate and timing jitter. As LN possesses high second-order nonlinear c{hi}(2) and electro-optic properties, an efficient single-photon detector on thin-film LN opens up the possibility to construct small scale fully-integrated quantum photonic chip which includes single-photon sources, filters, tunable quantum gates and detectors.
We present an alternative approach to the fabrication of highly efficient superconducting nanowire single-photon detectors (SNSPDs) based on tungsten silicide. Using well-established technologies for the deposition of dielectric mirrors and anti-reflection coatings in conjunction with an embedded WSi bilayer photon absorber structure, we fabricated a bandwidth-enhanced detector. It exhibits system detection efficiencies (SDE) higher than $left(87.1pm1.3right),%$ in the range from $1450,mathrm{nm}$ to $1640,mathrm{nm}$, with a maximum of $left(92.9pm1.1right),%$ at $1515,mathrm{nm}$. Our measurements indicate SDE enhancements of up to $left(18.4pm1.7right),%$ over a single-absorber WSi SNSPD. The latter has been optimized for 1550 nm for comparison and exhibits maximum SDE of $left(93.5pm1.2right),%$ at 1555 nm. We emphasize that our technological approach has been tested with, but is not limited to, the wavelengths and absorber material presented here. It could be adapted flexibly for multi-color detector systems from the ultraviolet to the mid-infrared wavelength range. This bears the potential for significant improvements in many current quantum optical experiments and applications as well as for detector commercialization.
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