No Arabic abstract
We calculate the differential conductance (dI/dV) corresponding to scanning tunneling spectroscopy (STS) measurements for two magnetic atoms adsorbed on a metal surface with the aid of the numerical renormalization group (NRG) technique. We find that the peak structure of the dI/dV spectra near the Fermi level changes gradually as a function of the adatom separation and the coupling between the adatoms and the metal surface conduction band. When the coupling becomes small, the peak disappears and, instead, a dip structure appears near the Fermi level. This dip structure is the manifestation of the strong antiferromagnetic correlation between the localized spins. The gradual change of the dI/dV structure from a peak structure to a dip structure originates from the crossover transition in the two impurity Kondo problem.
A system of two exchange-coupled Kondo impurities in a magnetic field gives rise to a rich phase space hosting a multitude of correlated phenomena. Magnetic atoms on surfaces probed through scanning tunnelling microscopy provide an excellent platform to investigate coupled impurities, but typical high Kondo temperatures prevent field-dependent studies from being performed, rendering large parts of the phase space inaccessible. We present an integral study of pairs of Co atoms on insulating Cu2N/Cu(100), which each have a Kondo temperature of only 2.6 K. In order to cover the different regions of the phase space, the pairs are designed to have interaction strengths similar to the Kondo temperature. By applying a sufficiently strong magnetic field, we are able to access a new phase in which the two coupled impurities are simultaneously screened. Comparison of differential conductance spectra taken on the atoms to simulated curves, calculated using a third order transport model, allows us to independently determine the degree of Kondo screening in each phase.
We present an extensive study of the two-impurity Kondo problem for spin-1 adatoms on square lattice using an exact canonical transformation to map the problem onto an effective one-dimensional system that can be numerically solved using the density matrix renormalization group method. We provide a simple intuitive picture and identify the different regimes, depending on the distance between the two impurities, Kondo coupling $J_K$, longitudinal anisotropy $D$, and transverse anisotropy $E$. In the isotropic case, two impurities on opposite(same) sublattices have a singlet(triplet) ground state. However, the energy difference between the triplet ground state and the singlet excited state is very small and we expect an effectively four-fold degenerate ground state, i.e., two decoupled impurities. For large enough $J_K$ the impurities are practically uncorrelated forming two independent underscreened states with the conduction electrons, a clear non-perturbative effect. When the impurities are entangled in an RKKY-like state, Kondo correlations persists and the two effects coexist: the impurities are underscreened, and the dangling spin-$1/2$ degrees of freedom are responsible for the inter-impurity entanglement. We analyze the effects of magnetic anisotropy in the development of quasi-classical correlations.
Quasiparticle tunneling spectra of both hole-doped (p-type) and electron-doped (n-type) cuprates are studied using a low-temperature scanning tunneling microscope. The results reveal that neither the pairing symmetry nor the pseudogap phenomenon is universal among all cuprates, and that the response of n-type cuprates to quantum impurities is drastically different from that of the p-type cuprates. The only ubiquitous features among all cuprates appear to be the strong electronic correlation and the nearest-neighbor antiferromagnetic Cu^{2+}-Cu^{2+} coupling in the CuO_2 planes.
A simple, reliable method for preparation of bulk Cr tips for Scanning Tunneling Microscopy (STM) is proposed and its potentialities in performing high-quality and high-resolution STM and Spin Polarized-STM (SP-STM) are investigated. Cr tips show atomic resolution on ordered surfaces. Contrary to what happens with conventional W tips, rest atoms of the Si(111)-7x7 reconstruction can be routinely observed, probably due to a different electronic structure of the tip apex. SP-STM measurements of the Cr(001) surface showing magnetic contrast are reported. Our results reveal that the peculiar properties of these tips can be suited in a number of STM experimental situations.
We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly read by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator.