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Register a new userAnomalous Hanle Effect in Quantum Dots : Evidence for Strong Dynamical Nuclear Polarization in Transverse Magnetic Field
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Hanle effect is ubiquitous in the study of spin-related phenomena and has been used to determine spin lifetime, precession and transport in semiconductors. Here, we report an experimental observation of anomalous Hanle effect in individual self-assembled InAs/GaAs quantum dots where we find that a sizeable photo-created electron spin polarization can be maintained in transverse fields as high as 1T until it abruptly collapses. The striking broadening of the Hanle curve by a factor of ~20 and its bistability upon reversal of the magnetic sweep direction points to a novel dynamical nuclear spin polarization mechanism where the effective nuclear magnetic field compensates the transverse applied field. This interpretation is further supported by the measurement of actual electron Zeeman splitting which exhibits an abrupt increase at the Hanle curve collapse. Strong inhomogeneous quadrupolar interactions typical for strained quantum dots are likely to play a key role in polarizing nuclear spins perpendicular to the optically injected spin orientation.
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Early experiments on spin-blockaded double quantum dots revealed surprising robust, large-amplitude current oscillations in the presence of a static (dc) source-drain bias [see e.g. K. Ono, S. Tarucha, Phys. Rev. Lett. 92, 256803 (2004)]. Experimental evidence strongly indicates that dynamical nuclear polarization plays a central role, but the mechanism has remained a mystery. Here we introduce a minimal albeit realistic model of coupled electron and nuclear spin dynamics which supports robust self-sustained oscillations. Our mechanism relies on a nuclear-spin analog of the tunneling magnetoresistance phenomenon (spin-dependent tunneling rates in the presence of an inhomogeneous Overhauser field) and nuclear spin diffusion, which governs dynamics of the spatial profile of nuclear polarization. The extremely long oscillation periods (up to hundreds of seconds) observed in experiments as well as the differences in phenomenology between vertical and lateral quantum dot structures are naturally explained in the proposed framework.
The dynamics of the coupled electron-nuclear spin system is studied in an ensemble of singly-charged (In,Ga)As/GaAs quantum dots (QDs) using periodic optical excitation at 1 GHz repetition rate. In combination with the electron-nuclei interaction, the highly repetitive excitation allows us to lock the electron spins into magnetic resonance in a transverse external magnetic field. Sweeping the field to higher values, the locking leads to an effective diamagnetic response of significant strength due to dynamic nuclear polarization, which shields the QD electrons at least partly from the external field and can even keep the internal magnetic field constant up to 1.3 T field variation. We model the effect through a magnetic field-dependent polarization rate of the nuclei, from which we suggest a strategy for adjusting the nuclear polarization through the detuning between optical excitation and electronic transition, in addition to tuning the magnetic field.
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pumping of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X$^+$ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage V$_g$. Variation of $Delta$V$_g$ of the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 $mu$eV (-22 %) to +10 $mu$eV (+7 %), although the X$^+$ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X$^+$ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X$^+$ lifetime which is of the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.
We theoretically investigate the controlled dynamic polarization of lattice nuclear spins in GaAs double quantum dots containing two electrons. Three regimes of long-term dynamics are identified, including the build up of a large difference in the Overhauser fields across the dots, the saturation of the nuclear polarization process associated with formation of so-called dark states, and the elimination of the difference field. We show that in the case of unequal dots, build up of difference fields generally accompanies the nuclear polarization process, whereas for nearly identical dots, build up of difference fields competes with polarization saturation in dark states. The elimination of the difference field does not, in general, correspond to a stable steady state of the polarization process.
We report on theoretical and experimental study of the spin polarization recovery and Hanle effect for the charge carriers interacting with the fluctuating nuclear spins in the semiconductor structures. We start the theoretical description from the simplest model of static and isotropic nuclear spin fluctuations. Then we describe the modification of the polarization recovery and Hanle curves due to the anisotropy of the hyperfine interaction, finite nuclear spin correlation time, and the strong pulsed spin excitation. For the latter case, we describe the resonance spin amplification effect in the Faraday geometry and discuss the manifestations of the quantum Zeno effect. The set of the experimental results for various structures and experimental conditions is chosen to highlight the specific effects predicted theoretically. We show that the spin polarization recovery is a very valuable tool for addressing carrier spin dynamics in semiconductors and their nanostructures.
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