We report the observation of developing fractional quantum Hall states at Landau level filling factors $ u = 1/2$ and 1/4 in electron systems confined to wide GaAs quantum wells with significantly $asymmetric$ charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they disappear when the charge distribution is made symmetric, suggest that these are one-component states, possibly described by the Moore-Read Pfaffian wavefunction.
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ u=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ u=1/2$ FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole $ u=1/2$ FQHE to be consistent with a two-component, Halperin-Laughlin ($Psi_{331}$) state.
The nature of the fractional quantum Hall effect at $ u=1/2$ observed in wide quantum wells almost three decades ago is still under debate. Previous studies have investigated it by the variational Monte Carlo method, which makes the assumption that the transverse wave function and the gap between the symmetric and antisymmetric subbands obtained in a local density approximation at zero magnetic field remain valid even at high perpendicular magnetic fields; this method also ignores the effect of Landau level mixing. We develop in this work a three-dimensional fixed phase Monte Carlo method, which gives, in a single framework, the total energies of various candidate states in a finite width quantum well, including Landau level mixing, directly in a large magnetic field. This method can be applied to one-component states, as well two-component states in the limit where the symmetric and antisymmetric bands are nearly degenerate. Our three-dimensional fixed-phase diffusion Monte Carlo calculations suggest that the observed 1/2 fractional quantum Hall state in wide quantum wells is likely to be the one-component Pfaffian state supporting non-Abelian excitations. We hope that this will motivate further experimental studies of this state.
Proposed even-denominator fractional quantum Hall effect (FQHE) states suggest the possibility of excitations with non-Abelian braid statistics. Recent experiments on wide square quantum wells observe even-denominator FQHE even under electrostatic tilt. We theoretically analyze these structures and develop a procedure to accurately test proposed quantum Hall wavefunctions. We find that tilted wells favor partial subband polarization to yield Abelian even-denominator states. Our results show that tilting quantum wells effectively engineers different interaction potentials allowing exploration of a wide variety of even-denominator states.
The multi-component nature of bilayer graphene (BLG), together with the ability to controllably tune between the various ground state orders, makes it a rich system in which to explore interaction driven phenomena. In the fractional quantum Hall effect (FQHE) regime, the unique Landau level spectrum of BLG is anticipated to support a non-Abelian even-denominator state that is tunable by both electric and magnetic fields. However, observation of this state, which is anticipated to be stronger than in conventional systems, has been conspicuously difficult. Here we report transport measurements of a robust even denominator FQHE in high-mobility, dual gated BLG devices. We confirm that the stability of the energy gap can be sensitively tuned and map the phase diagram. Our results establish BLG as a dynamic new platform to study topological ground states with possible non-Abelian excitations.
Monolayer (ML) semiconducting transition-metal dichalcogenides (TMDs) represent a unique class of two-dimensional (2D) electron systems. Their atomically thin structure -- just like graphene -- facilitates gate-tunability, while the sizable band gap and strong spin-orbit coupling hold promise for properties beyond graphene. Measurements under large magnetic fields have revealed an unusual LL structure, distinct from other 2D electron systems. However, owing to limited sample quality and poor electrical contact, probing the lowest Landau levels (LLs) has been challenging, and observation of electron correlations within the fractionally filled LLs regime has not been possible. Here, through bulk electronic compressibility measurements, we investigate the LL structure of ML WSe$_2$ in the extreme quantum limit, and observe fractional quantum Hall (FQH) states in the lowest three LLs. The odd-denominator FQH sequences demonstrate a systematic evolution with the LL orbital index, which has not been observed in any other system but is consistent with generic theoretical expectations. In addition, we observe an even-denominator state in the second LL that is expected to host non-Abelian statistics. Our results suggest that the 2D semiconductors can provide an experimental platform that closely resembles idealized theoretical models in the quantum Hall regime.
J. Shabani
,T. Gokmen
,Y. T. Chiu
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(2009)
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"Observation of fractional quantum Hall effect at even-denominator 1/2 and 1/4 fillings in asymmetric wide quantum wells"
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Javad Shabani
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