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Register a new userPerformance of Monolayer Graphene Nanomechanical Resonators with Electrical Readout
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The enormous stiffness and low density of graphene make it an ideal material for nanoelectromechanical (NEMS) applications. We demonstrate fabrication and electrical readout of monolayer graphene resonators, and test their response to changes in mass and temperature. The devices show resonances in the MHz range. The strong dependence of the resonant frequency on applied gate voltage can be fit to a membrane model, which yields the mass density and built-in strain. Upon removal and addition of mass, we observe changes in both the density and the strain, indicating that adsorbates impart tension to the graphene. Upon cooling, the frequency increases; the shift rate can be used to measure the unusual negative thermal expansion coefficient of graphene. The quality factor increases with decreasing temperature, reaching ~10,000 at 5 K. By establishing many of the basic attributes of monolayer graphene resonators, these studies lay the groundwork for applications, including high-sensitivity mass detectors.
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We present a simple micromanipulation technique to transfer suspended graphene flakes onto any substrate and to assemble them with small localized gates into mechanical resonators. The mechanical motion of the graphene is detected using an electrical, radio-frequency (RF) reflection readout scheme where the time-varying graphene capacitor reflects a RF carrier at f=5-6 GHz producing modulation sidebands at f +/- fm. A mechanical resonance frequency up to fm=178 MHz is demonstrated. We find both hardening/softening Duffing effects on different samples, and obtain a critical amplitude of ~40 pm for the onset of nonlinearity in graphene mechanical resonators. Measurements of the quality factor of the mechanical resonance as a function of DC bias voltage Vdc indicate that dissipation due to motion-induced displacement currents in graphene electrode is important at high frequencies and large Vdc.
We report radio frequency (rf) electrical readout of graphene mechanical resonators. The mechanical motion is actuated and detected directly by using a vector network analyzer, employing a local gate to minimize parasitic capacitance. A resist-free doubly clamped sample with resonant frequency ~ 34 MHz, quality factor ~ 10000 at 77 K, and signal-to-background ratio of over 20 dB is demonstrated. In addition to being over two orders of magnitude faster than the electrical rf mixing method, this technique paves the way for use of graphene in rf devices such as filters and oscillators.
Heterostructures play significant roles in modern semiconductor devices and micro/nanosystems in a plethora of applications in electronics, optoelectronics, and transducers. While state-of-the-art heterostructures often involve stacks of crystalline epi-layers each down to a few nanometers thick, the intriguing limit would be heterto-atomic-layer structures. Here we report the first experimental demonstration of freestanding van der Waals heterostructures and their functional nanomechanical devices. By stacking single-layer (1L) MoS2 on top of suspended single-, bi-, tri- and four-layer (1L to 4L) graphene sheets, we realize array of MoS2-graphene heterostructures with varying thickness and size. These heterostructures all exhibit robust nanomechanical resonances in the very high frequency (VHF) band (up to ~100 MHz). We observe that fundamental-mode resonance frequencies of the heterostructure devices fall between the values of graphene and MoS2 devices. Quality (Q) factors of heterostructure resonators are lower than those of graphene but comparable to those of MoS2 devices, suggesting interface damping related to interlayer interactions in the van der Waals heterostructures. This study validates suspended atomic layer heterostructures as an effective device platform and opens opportunities for exploiting mechanically coupled effects and interlayer interactions in such devices.
In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, dissipation dilution, is employed in mirror suspensions of gravitational wave interferometers and at the nanoscale, where soft-clamping and strain engineering have allowed extremely high quality factors. However, these techniques have so far only been applied in amorphous materials, specifically silicon nitride. Crystalline materials exhibit significantly lower intrinsic damping at cryogenic temperatures, due to the absence of two level systems in the bulk, as exploited in Weber bars and silicon optomechanical cavities. Applying dissipation dilution engineering to strained crystalline materials could therefore enable extremely low loss nanomechanical resonators, due to the combination of reduced internal friction, high intrinsic strain, and high yield strength. Pioneering work has not yet fully exploited this potential. Here, we demonstrate that single crystal strained silicon, a material developed for high mobility transistors, can be used to realize mechanical resonators with ultralow dissipation. We observe that high aspect ratio ($>10^5$) strained silicon nanostrings support MHz mechanical modes with quality factors exceeding $10^{10}$ at 7 K, a tenfold improvement over values reported in silicon nitride. At 7 K, the thermal noise-limited force sensitivity is approximately $45 mathrm{{zN}/{sqrt{Hz}}}$ - approaching that of carbon nanotubes - and the heating rate is only 60 quanta-per-second. Our nanomechanical resonators exhibit lower dissipation than the most pristine macroscopic oscillators and their low mass makes them particularly promising for quantum sensing and transduction.
Here we report on a new type of ordering which allows to modify the electronic structure of a graphene monolayer (ML). We have intercalated small gold clusters between the top monolayer graphene and the buffer layer of epitaxial graphene. We show that these clusters perturb the quasiparticles on the ML graphene, and act as quantum dots creating a superlattice of resonators on the graphene ML, as revealed by a strong pattern of standing waves. A detailed analysis of the standing wave patterns using Fourier Transform Scanning Tunneling Spectroscopy strongly indicates that this phenomenon can arise from a strong modification of the band structure of graphene and (or) from Charge Density Waves (CDW)where a large extension of Van Hove singularities are involved.
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