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Register a new userIncipient Formation of an Electron Lattice in a Weakly-Confined Quantum Wire
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We study the low-temperature transport properties of 1D quantum wires as the confinement strength V_conf and the carrier density n_1D are varied using a combination of split gates and a top gate in GaAs/AlGaAs heterostructures. At intermediate V_conf and n_1D, we observe a jump in conductance to 4e^2/h, suggesting a double wire. On further reducing n_1D, plateau at 2e^2/h returns. Our results show beginnings of the formation of an electron lattice in an interacting quasi-1D quantum wire. In the presence of an in-plane magnetic field, mixing of spin-aligned levels of the two wires gives rise to more complex states.
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We study interaction-induced localization of electrons in an inhomogeneous quasi-one-dimensional system--a wire with two regions, one at low density and the other high. Quantum Monte Carlo techniques are used to treat the strong Coulomb interactions in the low density region, where localization of electrons occurs. The nature of the transition from high to low density depends on the density gradient--if it is steep, a barrier develops between the two regions, causing Coulomb blockade effects. Ferromagnetic spin polarization does not appear for any parameters studied. The picture emerging here is in good agreement with measurements of tunneling between two wires.
We study electron transport in quasi-one-dimensional wires at relatively weak electrostatic confinements, where the Coulomb interaction distorts the ground state, leading to the bifurcation of the electronic system into two rows. Evidence of finite coupling between the rows, resulting in bonding and antibonding states, is observed. At high dc source-drain bias, a structure is observed at 0.5(2e^2/h) due to parallel double-row transport, along with a structure at 0.25(2e^2/h), providing further evidence of coupling between the two rows.
We study the quench dynamics of a topologically trivial one-dimensional gapless wire following its sudden coupling to topological bound states. We find that as the bound states leak into and propagate through the wire, signatures of their topological nature survive and remain measurable over a long lifetime. Thus, the quench dynamically induces topological properties in the gapless wire. Specifically, we study a gapless wire coupled to fractionally charged solitons or Majorana fermions and characterize the dynamically induced topology in the wire, in the presence of disorder and short-range interactions, by analytical and numerical calculations of the dynamics of fractional charge, fermion parity, entanglement entropy, and fractional exchange statistics. In a dual effective description, this phenomenon is described by correlators of boundary changing operators, which, remarkably, generate topologically non-trivial monodromies in the gapless wire, both for abelian and non-abelian quantum statistics of the bound states.
The combined presence of a Rashba and a Zeeman effect in a ballistic one-dimensional conductor generates a spin pseudogap and the possibility to propagate a beam with well defined spin orientation. Without interactions transmission through a barrier gives a relatively well polarized beam. Using renormalization group arguments, we examine how electron-electron interactions may affect the transmission coefficient and the polarization of the outgoing beam.
We study acoustic-phonon-induced relaxation of charge excitations in single and tunnel-coupled quantum dots containing few confined interacting electrons. The Full Configuration Interaction approach is used to account for the electron-electron repulsion. Electron-phonon interaction is accounted for through both deformation potential and piezoelectric field mechanisms. We show that electronic correlations generally reduce intradot and interdot transition rates with respect to corresponding single-electron transitions, but this effect is lessened by external magnetic fields. On the other hand, piezoelectric field scattering is found to become the dominant relaxation mechanism as the number of confined electrons increases. Previous proposals to strongly suppress electron-phonon coupling in properly designed single-electron quantum dots are shown to hold also in multi-electron devices. Our results indicate that few-electron orbital degrees of freedom are more stable than single-electron ones.
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