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Orientation dependence of the Schottky barrier height for La$_0.6$Sr$_0.4$MnO$_3$/SrTiO$_3$ heterojunctions

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 Added by Hiroshi Kumigashira
 Publication date 2009
  fields Physics
and research's language is English




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The authors report on the crystallographic orientation dependence of the Schottky properties for heterojunctions between a half-metallic ferromagnet La$_0.6$Sr$_0.4$MnO$_3$ (LSMO) and Nb-doped SrTiO3 semiconductor. The Schottky barrier height determined by in situ photoemission measurements is independent for the substrate orientations (001) and (110), while the magnetic properties of LSMO (110) films are more enhanced than for (001) films. These results suggest that the performance of magnetic devices based on ferromagnetic manganite is improved by using (110)-oriented substrates.



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