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Distinct Signatures For Coulomb Blockade and Aharonov-Bohm Interference in Electronic Fabry-Perot Interferometers

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 Added by Charles M. Marcus
 Publication date 2008
  fields Physics
and research's language is English




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Two distinct types of magnetoresistance oscillations are observed in two electronic Fabry-Perot interferometers of different sizes in the integer quantum Hall regime. Measuring these oscillations as a function of magnetic field and gate voltages, we observe three signatures that distinguish the two types. The oscillations observed in a 2.0 square micron device are understood to arise from the Coulomb blockade mechanism, and those observed in an 18 square micron device from the Aharonov-Bohm mechanism. This work clarifies, provides ways to distinguish, and demonstrates control over, these distinct physical origins of resistance oscillations seen in electronic Fabry-Perot interferometers.



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Electron transport through two parallel quantum dots is a kind of solid-state realization of double-path interference. We demonstrate that the inter-dot Coulomb correlation and quantum coherence would result in strong current fluctuations with a divergent Fano factor at zero frequency. We also provide physical interpretation for this surprising result, which displays its generic feature and allows us to recover this phenomenon in more complicated systems.
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We investigate a Fabry-Perot interferometer in the integer Hall regime in which only one edge channel is transmitted and n channels are trapped into the interferometer loop. Addressing recent experimental observations, we assume that Coulomb blockade effects are completely suppressed due to screening, while keeping track of a residual strong short range electron-electron interaction between the co-propagating edge channels trapped into the interferometer loop. This kind of interaction can be completely described in the framework of the edge-magnetoplasmon scattering matrix theory allowing us to evaluate the backscattering current and the associated differential conductance as a function of the bias voltage. The remarkable features of these quantities are discussed as a function of the number of trapped channels. The developed formalism reveals very general and provides also a simple way to model the experimentally relevant geometry in which some of the trapped channels are absorbed into an Ohmic contact, leading to energy dissipation.
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