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Register a new userA new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots
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A recently discovered mechanism of electric dipole spin resonance, mediated by the hyperfine interaction, is investigated experimentally and theoretically. The effect is studied using a spin-selective transition in a GaAs double quantum dot. The resonant frequency is sensitive to the instantaneous hyperfine effective field, revealing a nuclear polarization created by driving the resonance. A device incorporating a micromagnet exhibits a magnetic field difference between dots, allowing electrons in either dot to be addressed selectively. An unexplained additional signal at half the resonant frequency is presented.
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We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated via two mechanisms: the SOC-induced intradot pseudospin states mixing and the interdot spin-flipped tunneling. The EDSR frequency and strength are determined by these mechanisms together. For both mechanisms the electric-dipole transition rates are strongly dependent on the external magnetic field. Their competition can be revealed by increasing the magnetic field and/or the interdot distance for the double dot. To clarify whether the strong SOC significantly impact the electron state coherence, we also calculate relaxations from excited levels via phonon emission. We show that spin-flip relaxations can be effectively suppressed by the phonon bottleneck effect even at relatively low magnetic fields because of the very large $g$-factor of strong SOC materials such as InSb.
A theory of Electric Dipole Spin Resonance (EDSR), that is caused by various mechanisms of spin-orbit coupling, is developed as applied to free electrons in a parabolic quantum well. Choosing a parabolic shape of the well has allowed us to find explicit expressions for the EDSR intensity and its dependence on the magnetic field direction in terms of the basic parameters of the Hamiltonian. By using these expressions, we have investigated and compared the effect of specific mechanisms of spin orbit (SO) coupling and different polarizations of ac electric field on the intensity of EDSR. Angular dependences of the EDSR intensity are indicative of the relative contributions of the competing mechanisms of SO coupling. Our results show that electrical manipulating electron spins in quantum wells is generally highly efficient, especially by an in-plane ac electric field.
Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate flopping-mode electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flopping-mode resonance, which should facilitate low power spin control in quantum dot arrays.
On-chip magnets can be used to implement relatively large local magnetic field gradients in na- noelectronic circuits. Such field gradients provide possibilities for all-electrical control of electron spin-qubits where important coupling constants depend crucially on the detailed field distribution. We present a double quantum dot (QD) hybrid device laterally defined in a GaAs / AlGaAs het- erostructure which incorporates two single domain nanomagnets. They have appreciably different coercive fields which allows us to realize four distinct configurations of the local inhomogeneous field distribution. We perform dc transport spectroscopy in the Pauli-spin blockade regime as well as electric-dipole-induced spin resonance (EDSR) measurements to explore our hybrid nanodevice. Characterizing the two nanomagnets we find excellent agreement with numerical simulations. By comparing the EDSR measurements with a second double QD incorporating just one nanomagnet we reveal an important advantage of having one magnet per QD: It facilitates strong field gradients in each QD and allows to control the electron spins individually for instance in an EDSR experi- ment. With just one single domain nanomagnet and common QD geometries EDSR can likely be performed only in one QD.
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flopping-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the hyperfine interaction of the nuclear spins we can achieve $pi/2-X$ gate error rates of $sim 10^{-4}$ using realistic noise models. We highlight that the low charge noise environment in these all-epitaxial phosphorus-doped silicon qubits will facilitate the realisation of strong coupling of the qubit to superconducting microwave cavities allowing for long-distance two-qubit operations.
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