Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOptimal electron entangler and single electron source at low temperatures
180
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Electron transport in mesoscopic contacts at low temperatures is accompanied by logarithmically divergent equilibrium noise. We show that this equilibrium noise can be dramatically suppressed in the case of a tunnel junction with modulated (time-dependent) transparency, and identify the optimal protocol. We show how such a contact could be used either as an optimal electron entangler or as a single-electron source with suppressed equilibrium noise at low temperatures.
rate research
Read More
Understanding ultrafast coherent electron dynamics is necessary for application of a single-electron source to metrological standards, quantum information processing, including electron quantum optics, and quantum sensing. While the dynamics of an electron emitted from the source has been extensively studied, there is as yet no study of the dynamics inside the source. This is because the speed of the internal dynamics is typically higher than 100 GHz, beyond state-of-the-art experimental bandwidth. Here, we theoretically and experimentally demonstrate that the internal dynamics in a silicon singleelectron source comprising a dynamic quantum dot can be detected, utilising a resonant level with which the dynamics is read out as gate-dependent current oscillations. Our experimental observation and simulation with realistic parameters show that an electron wave packet spatially oscillates quantum-coherently at $sim$ 200 GHz inside the source. Our results will lead to a protocol for detecting such fast dynamics in a cavity and offer a means of engineering electron wave packets. This could allow high-accuracy current sources, high-resolution and high-speed electromagnetic-field sensing, and high-fidelity initialisation of flying qubits.
We report an experimental technique to measure and manipulate the arrival-time and energy distributions of electrons emitted from a semiconductor electron pump, operated as both a single-electron source and a two-electron source. Using an energy-selective detector whose transmission we control on picosecond timescales, we can measure directly the electron arrival-time distribution and we determine the upper-bound to the distribution width to be 30 ps. We study the effects of modifying the shape of the voltage waveform that drives the electron pump, and show that our results can be explained by a tunneling model of the emission mechanism. This information was in turn used to control the emission-time difference and energy gap between a pair of electrons.
We investigate the basic charge and heat transport properties of charge neutral epigraphene at sub-kelvin temperatures, demonstrating nearly logarithmic dependence of electrical conductivity over more than two decades in temperature. Using graphenes sheet conductance as in-situ thermometer, we present a measurement of electron-phonon heat transport at mK temperatures and show that it obeys the $T^4$ dependence characteristic for clean two-dimensional conductor. Based on our measurement we predict the noise-equivalent power of $sim 10^{-22}~{rm W}/sqrt{{rm Hz}}$ of epigraphene bolometer at the low end of achievable temperatures.
We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuation of a stainless steel powder filter is more than 80 dB at frequencies above 1.5 GHz. In all metal powder filters the attenuation increases with temperature. Compared to classical powder filters, the design presented here is much less laborious to fabricate and specifically the copper powder PCB-filters deliver an equal or even better performance than their classical counterparts.
Configuration transitions of individual molecules and atoms on surfaces are traditionally described with energy barriers and attempt rates using an Arrhenius law. This approach yields consistent energy barrier values, but also attempt rates orders of magnitude below expected oscillation frequencies of particles in the meta-stable state. Moreover, even for identical systems, the measurements can yield values differing from each other by orders of magnitude. Using low temperature scanning tunnelling microscopy (STM) to measure an individual dibutyl-sulfide molecule (DBS) on Au(111), we show that we can avoid these apparent inconsistencies if we account for the relative position of tip apex and molecule with accuracy of a fraction of the molecule size. Altering the tip position on that scale modifies the transitions barrier and attempt rate in a highly correlated fashion, which on account of the relation between the latter and entropy results in a single-molecular enthalpy-entropy compensation. By appropriately positioning the tip apex the STM tip can be used to select the operating point on the compensation line and modify the transition rates. The results highlight the need to consider entropy in transition rates of a single molecule, even at temperatures where entropy effects are usually neglected.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
