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Register a new userColossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$
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We report a significant decrease in the low-temperature resistance induced by the application of an electric current on the $ab$-plane in the paramagnetic insulating (PMI) state of (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$. A colossal electroresistance effect attaining -95% is observed at lower temperatures. A colossal magnetoresistive step appears near 5T at low temperatures below 10K, accompanied by an ultrasharp width of the insulator-metal transition. Injection of higher currents to the crystal causes a disappearance of the steplike transition. These findings have a close relationship with the presence of the short-range charge-ordered clusters pinned within the PMI matrix of the crystal studied.
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e report the effect of pressure on the steplike magnetostriction of single crystalline bilayered manganite (LaPr)1.2Sr1.8Mn2O8, for our understandings of the ultrasharp nature of the field-induced first-order transition from a paramagnetic insulator to a ferromagnetic metal phase. The application of pressure suppresses a steplike transformation and causes a broad change in the magnetostriction. The injection of an electric current to the crystal also weakens the steplike variation in both the magnetostriction and magnetoresistance. The stabilization of ferromagnetic interaction or the delocalization of charge carriers is promoted with the applied pressure or applied current, resulting in the suppressed steplike behavior. Our findings suggest that the step phenomenon is closely related to the existence of localized carriers such as the short-range charge-orbital ordered clusters.
We observed a large HEMD effect in the bilayer manganite (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_2$O$_7$, a direct consequence of field driven spin-glass insulator to ferromagnetic metal transition. The remnants of the transition can be used to achieve dielectric contrast at room temperature. This discovery suggests that electronic mechanisms such as the metal-insulator transition, charge ordering, and orbital ordering can be exploited to give substantial dielectric contrast in other materials.
We measured the magneto-optical response of (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_2$O$_7$ in order to investigate the microscopic aspects of the magnetic field driven spin-glass insulator to ferromagnetic metal transition. Application of a magnetic field recovers the ferromagnetic state with an overall redshift of the electronic structure, growth of the bound carrier localization associated with ferromagnetic domains, development of a pseudogap, and softening of the Mn-O stretching and bending modes that indicate a structural change. We discuss field- and temperature-induced trends within the framework of the Tomioka-Tokura global electronic phase diagram picture and suggest that controlled disorder near a phase boundary can be used to tune the magnetodielectric response. Remnants of the spin-glass insulator to ferromagnetic metallic transition can also drive 300 K color changes in (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_2$O$_7$.
We report the detailed study of dielectric response of Pr(0.6)Ca(0.4)MnO(3) (PCMO), member of manganite family showing colossal magnetoresistance. Measurements have been performed on four polycrystalline samples and four single crystals, allowing us to compare and extract the essence of dielectric response in the material. High frequency dielectric function is found to be 30, as expected for the perovskite material. Dielectric relaxation is found in frequency window of 20Hz-1MHz at temperatures of 50-200K that yields to colossal low-frequency dielectric function, i.e. static dielectric constant. Static dielectric constant is always colossal, but varies considerably in different samples from 1000 until 100000. The measured data can be simulated very well by blocking (surface barrier) capacitance in series with sample resistance. This indicates that the large dielectric constant in PCMO arises from the Schottky barriers at electrical contacts. Measurements in magnetic field and with d.c. bias support this interpretation. Weak anomaly at the charge ordering temperature can also be attributed to interplay of sample and contact resistance. We comment our results in the framework of related studies by other groups.
In the present work the authors report results of broadband dielectric spectroscopy on various samples of CaCu3Ti4O12, including so far only rarely investigated single crystalline material. The measurements extend up to 1.3 GHz, covering more than nine frequency decades. We address the question of the origin of the colossal dielectric constants and of the relaxational behavior in this material, including the second relaxation reported in several recent works. For this purpose, the dependence of the temperature- and frequency-dependent dielectric properties on different tempering and surface treatments of the samples and on ac-field amplitude are investigated. Broadband spectra of a single crystal are analyzed by an equivalent circuit description, assuming two highly resistive layers in series to the bulk. Good fits could be achieved, including the second relaxation, which also shows up in single crystals. The temperature- and frequency-dependent intrinsic conductivity of CCTO is consistent with the Variable Range Hopping model. The second relaxation is sensitive to surface treatment and, in contrast to the main relaxation, also is strongly affected by the applied ac voltage. Concerning the origin of the two insulating layers, we discuss a completely surface-related mechanism assuming the formation of a metal-insulator diode and a combination of surface and internal barriers.
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